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Vasil'evskii Ivan Sergeevich

Publications in Math-Net.Ru

  1. Study of adsorption of the SARS-CoV-2 virus spike protein by vibrational spectroscopy using terahertz metamaterials (Kvantovaya Elektronika, 52:1 (2022), 2–12)

    Kvantovaya Elektronika, 52:3 (2022),  288
  2. Study of adsorption of the SARS-CoV-2 virus spike protein by vibrational spectroscopy using terahertz metamaterials

    Kvantovaya Elektronika, 52:1 (2022),  2–12
  3. 3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  989–994
  4. Thz radiation of photoconductive antennas based on $\{$LT-GaAs/GaAs:Si$\}$ superlattice structures

    Optics and Spectroscopy, 128:7 (2020),  1004–1011
  5. Electron-quantum transport in pseudomorphic and metamorphic In$_{0.2}$Ga$_{0.8}$As-based quantum wells

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  359–364
  6. Features of pulsed laser annealing of ÂÑ$_{3}$ films on sapphire substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019),  26–29
  7. Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1447–1454
  8. Temperature dependences of the threshold current and output power of a quantum-cascade laser emitting at 3.3 THz

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1268–1273
  9. Transport in short-period GaAs/AlAs superlattices with electric domains

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  472
  10. Electron transport in phemt AlGaAs/InGaAs/GaAs ÐÍÅÌÒ quantum wells at different temperatures: influence of one-side $\delta$-Si doping

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  201–206
  11. Electron effective mass and momentum relaxation time in one-sided $\delta$-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells with high electron density

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  120–127
  12. Peculiarities of silicon-donor ionization and electron scattering in pseudomorphous AlGaAs/InGaAs/GaAs quantum wells with heavy unilateral $\delta$-doping

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  34–41
  13. The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  11–17
  14. Mode loss spectra in THz quantum-cascade lasers with gold- and silver-based double metal waveguides

    Kvantovaya Elektronika, 48:11 (2018),  1005–1008
  15. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates

    Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
  16. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  529–534
  17. Quantum Hall effect and hopping conductivity in $n$-InGaAs/InAlAs nanoheterostructures

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1669–1674
  18. Investigation of the thermal stability of metastable GeSn epitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1570–1575
  19. Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode

    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  567–573


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