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Vasil'evskii Ivan Sergeevich

Publications in Math-Net.Ru

  1. Temperature influence on the crystal structure of CdTe(111) films grown by molecular-beam epitaxy on GaAs(100) substrates

    Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  141–149
  2. Study of adsorption of the SARS-CoV-2 virus spike protein by vibrational spectroscopy using terahertz metamaterials (Kvantovaya Elektronika, 52:1 (2022), 2–12)

    Kvantovaya Elektronika, 52:3 (2022),  288
  3. Study of adsorption of the SARS-CoV-2 virus spike protein by vibrational spectroscopy using terahertz metamaterials

    Kvantovaya Elektronika, 52:1 (2022),  2–12
  4. 3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  989–994
  5. Thz radiation of photoconductive antennas based on $\{$LT-GaAs/GaAs:Si$\}$ superlattice structures

    Optics and Spectroscopy, 128:7 (2020),  1004–1011
  6. Electron-quantum transport in pseudomorphic and metamorphic In$_{0.2}$Ga$_{0.8}$As-based quantum wells

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  359–364
  7. Features of pulsed laser annealing of ÂÑ$_{3}$ films on sapphire substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019),  26–29
  8. Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1447–1454
  9. Temperature dependences of the threshold current and output power of a quantum-cascade laser emitting at 3.3 THz

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1268–1273
  10. Transport in short-period GaAs/AlAs superlattices with electric domains

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  472
  11. Electron transport in phemt AlGaAs/InGaAs/GaAs ÐÍÅÌÒ quantum wells at different temperatures: influence of one-side $\delta$-Si doping

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  201–206
  12. Electron effective mass and momentum relaxation time in one-sided $\delta$-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells with high electron density

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  120–127
  13. Peculiarities of silicon-donor ionization and electron scattering in pseudomorphous AlGaAs/InGaAs/GaAs quantum wells with heavy unilateral $\delta$-doping

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  34–41
  14. The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  11–17
  15. Mode loss spectra in THz quantum-cascade lasers with gold- and silver-based double metal waveguides

    Kvantovaya Elektronika, 48:11 (2018),  1005–1008
  16. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates

    Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
  17. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  529–534
  18. Quantum Hall effect and hopping conductivity in $n$-InGaAs/InAlAs nanoheterostructures

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1669–1674
  19. Investigation of the thermal stability of metastable GeSn epitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1570–1575
  20. Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode

    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  567–573
  21. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1612–1618
  22. Photoluminescence properties of modulation-doped In$_x$Al$_{1-x}$As/In$_y$Ga$_{1-y}$As/In$_x$Al$_{1-x}$As structures with strained inas and gaas nanoinserts in the quantum well

    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1243–1253
  23. Photoluminescence of GaAs/AlGaAs quantum ring arrays

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  652–657
  24. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well

    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  241–248
  25. Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  128–133
  26. Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1660–1665
  27. Technology and electronic properties of PHEMT AlGaAs/In$_{y(z)}$Ga$_{1-y(z)}$As/GaAs compositionally graded quantum wells

    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1258–1264
  28. Application of photoluminescence spectroscopy to studies of In$_{0.38}$Al$_{0.62}$As/In$_{0.38}$Ga$_{0.62}$As/In$_{0.38}$Al$_{0.62}$As metamorphic nanoheterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  909–916
  29. Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic In$_{0.7}$Al$_{0.3}$As/In$_{0.75}$Ga$_{0.25}$As/In$_{0.7}$Al$_{0.3}$As HEMT nanoheterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  67–72
  30. Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1215–1220
  31. Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations

    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  990–996
  32. Persistent photoconductivity and electron mobility in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As/InP quantum-well structures

    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  927–934
  33. Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures

    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  510–515
  34. Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  348–352

© Steklov Math. Inst. of RAS, 2025