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Publications in Math-Net.Ru
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Simulation of air conditioning system perspective of a passenger plane in the software package SiminTech
Comp. nanotechnol., 2018, no. 3, 24–31
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Structural and compositional rearrangement in $\mathrm{SiC}$ initiated by the ion implantation of gallium and high temperature annealing
Fizika Tverdogo Tela, 30:2 (1988), 629–632
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Temperature Dependence of Capacitance of Carbide-Silicon $p{-}n$ Junctions
Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1257–1260
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Capacity Spectroscopy of p${-}$n Junctions Based on Epitaxial $4H$-SiC Produced by Ionic Implantation of Al
Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2169–2172
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Structures with Ionically Implanted p${-}$n Junction Based on Epitaxial $4H$-SiC with $S$-Like Current–Voltage Characteristic
Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1654–1657
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Study of Current-Voltage Characteristics of Diode Structures Based on Silicon Carbide
Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 844–848
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Study of Deep Centers
in $p{-}n$ Junctions Produced by Ion
Doping of $6H$-SiC
Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1430–1433
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Capacity-Spectroscopic Study of Deep Levels in SiC
Fizika i Tekhnika Poluprovodnikov, 19:1 (1985), 114–117
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Имплантация ионов галлия в пленки PbSe
Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 611–613
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