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Publications in Math-Net.Ru
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The formation and structure of thermomigration silicon channels doped with Ga
Zhurnal Tekhnicheskoi Fiziki, 91:3 (2021), 467–474
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Structural perfection and composition of gallium-doped thermomigration silicon layers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 27–30
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Results of the experiments on the crystallization of a Ge–Si–Sb solid solution under the conditions of microgravity on the Soyuz–Apollo spacecraft
Fizika Tverdogo Tela, 61:4 (2019), 664–670
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Study of the nature of the dislocation loop sources by X-ray diffraction topography
Fizika Tverdogo Tela, 34:3 (1992), 708–713
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Correlation of inhomogeneities in the superconducting properties with the variation of the lattice parameter $C$ in nontwinning $\mathrm{YBa}_{2}\mathrm{Cu}_{3-z}\mathrm{Al}_{y}\mathrm{O}_{6+x}$ crystals
Fizika Tverdogo Tela, 33:10 (1991), 2896–2906
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Motion of surface damage-induced dislocations in $\mathrm{SiC}$
Fizika Tverdogo Tela, 32:8 (1990), 2311–2315
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A new type of interference bands in Bragg section topograms
Fizika Tverdogo Tela, 29:5 (1987), 1608–1611
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ANOMALOUS OBSERVABILITY OF THE X-RAY TOPOGRAPHIC CONTRAST OF DISLOCATION
LATTICES OF NONCOMFORMITY IN HETEROEPITAXIAL STRUCTURES
Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987), 1114–1120
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DEFECT FORMATION IN GAALSB/GASB STRUCTURES FOR PHOTODIODES
Zhurnal Tekhnicheskoi Fiziki, 57:2 (1987), 316–321
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Dislocation-structure and volt-ampere characteristics of diode smooth $n-In\,As/p-In\,As_{1-x}\,P_{x}$ heterosystems, obtained by the electric liquid epitaxy method
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987), 1134–1139
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Origination of structural ruptures in epitaxial layers of silicon-carbide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 641–645
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Dislocation activity of microdefects in silicon single crystals
Fizika Tverdogo Tela, 28:10 (1986), 3192–3194
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Wave packets and microdefect images in double crystal X-ray topography
Fizika Tverdogo Tela, 28:8 (1986), 2343–2351
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X-ray topography determination of misfit dislocation sign
Fizika Tverdogo Tela, 28:4 (1986), 1052–1057
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X-ray topography study of microdefects in silicon
Fizika Tverdogo Tela, 28:2 (1986), 440–446
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Misfit $60^{\circ}$-degree-dislocations in $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs} (001)$ type heterostructures
Fizika Tverdogo Tela, 27:10 (1985), 2960–2964
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DISLOCATION DENSITY AND P-N STRUCTURE PARAMETERS BASED ON GAAS(1-X)SBX
SOLID-SOLUTIONS
Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2280–2282
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METHODS OF THE STUDY OF MICRODEFECTS IN SILICON MONOCRYSTALS ON AN X-RAY
TOPOGRAPHIC DTS-1 SPECTROMETER
Zhurnal Tekhnicheskoi Fiziki, 53:9 (1983), 1750–1753
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Solution of the problem of X-ray projection topogram calculation
Dokl. Akad. Nauk SSSR, 240:4 (1978), 836–838
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