Smol'skii Igor' Leonidovich

Publications in Math-Net.Ru

1. USE OF ASYMMETRIC EXPOSURES IN PLANAR WAVE X-RAY TOPOGRAPHY FOR THE STUDY OF MICRODEFECTS IN SILICON-CRYSTALS
   
   Zhurnal Tekhnicheskoi Fiziki, 62:4 (1992),  171–175
2. Experimental study and computer simulation of high temperature dislocation images in X-ray section topograms in $\mathrm{Si}$
   
   Fizika Tverdogo Tela, 29:5 (1987),  1392–1398
3. Direct measurement of the parameters of x-ray dynamic scattering by silicon crystals at elevated temperatures
   
   Fizika Tverdogo Tela, 28:9 (1986),  2597–2603
4. Vicinal sectoriality and its relation to ADP crystal growth kinetics
   
   Dokl. Akad. Nauk SSSR, 278:2 (1984),  358–361
5. Realization of the dislocation free growth of ADP crystals under the X-ray topography control in situ
   
   Dokl. Akad. Nauk SSSR, 260:4 (1981),  864–867
6. Investigation of the growth kinetics of ADP crystals from solution by the “in-situ” method fo X-ray topography
   
   Dokl. Akad. Nauk SSSR, 248:2 (1979),  356–358