Kuz'menkov Aleksandr Georgievich

Publications in Math-Net.Ru

1. Однофотонное излучение в С-диапазоне в цилиндрическом микрорезонаторе с квантовыми точками InAs/InGaAs
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:3 (2025),  189–193
2. The study of the phase noise of 89X nm-range single-mode intra-cavity contacted vcsels
   
   Optics and Spectroscopy, 132:12 (2024),  1230–1232
3. Linewidth of 89Х nm-range intra-cavity contacted VCSELs
   
   Optics and Spectroscopy, 132:12 (2024),  1226–1229
4. Linewidth study of MBE-grown wafer-fused single-mode 1.55 $\mu$m VCSELs
   
   Optics and Spectroscopy, 131:11 (2023),  1486–1489
5. Emission linewidth and $\alpha$-factor of 1.55 $\mu$m-range vertical-cavity surface-emitting lasers based on InGaAs/InGaAlAs quantum wells
   
   Optics and Spectroscopy, 131:8 (2023),  1095–1100
6. Analysis of the internal optical losses of the 89X nm-range intracavity-contacted vertical-cavity surface-emitting lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  43–46
7. Simulation and analysis of the optical characteristics of cylindrical micropillars with InAs/GaAs quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  592–598
8. 1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  814–823
9. Peculiarities of growth of InAs quantum dot arrays with low surface density by molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:24 (2022),  42–46
10. Microwave Schottky diodes based on single GaN nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:15 (2022),  22–25
11. High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method
    
    Kvantovaya Elektronika, 52:10 (2022),  878–884
12. Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers
    
    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2008–2017
13. Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  890–894
14. Investigation of the noise characteristics of vertical-cavity surface-emitting laser with a rhomboidal oxide current aperture for use in a Cs-based compact atomic magnetometer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  3–8
15. Analysis of internal optical loss of 1.3 $\mu$m vertical-cavity surface-emitting laser based on $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021),  3–7
16. Impact of transverse optical confinment on performance of 1.55 $\mu$m vertical-cavity surface-emitting lasers with a buried tunnel junction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  3–8
17. Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  36–38
18. The design of an electrically-driven single photon source of the 1.3-$\mu$m spectral range based on a vertical microcavity with intracavity contacts
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  23–27
19. Investigation of anomalous lasing in vertical-cavity surface-emitting lasers of the 850-nm spectral range with a double oxide current aperture at large gain-to-cavity detuning
    
    Optics and Spectroscopy, 128:8 (2020),  1151–1159
20. 1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1088–1096
21. The effect of a saturable absorber in long-wavelength vertical-cavity surface-emitting lasers fabricated by wafer fusion technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  49–54
22. A vertical-cavity surface-emitting laser for the 1.55-$\mu$m spectral range with tunnel junction based on $n^{++}$-InGaAs/$p^{++}$-InGaAs/$p^{++}$-InAlGaAs layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  21–25
23. The effect of active region heating on dynamic and power characteristics of quantum cascade lasers emitting at a wavelength of 4.8 $\mu$m at room temperature
    
    Optics and Spectroscopy, 127:3 (2019),  445–448
24. Analysis of the internal optical losses of the vertical-cavity surface-emitting laser of the spectral range of 1.55 $\mu$m formed by a plate sintering technique
    
    Optics and Spectroscopy, 127:1 (2019),  145–149
25. Influence of output optical losses on the dynamic characteristics of 1.55-$\mu$m wafer-fused vertical-cavity surface-emitting lasers
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1128–1134
26. InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  29–33
27. Heterobarrier varactors with nonuniformly doped modulation layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  51–54
28. Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks
    
    Kvantovaya Elektronika, 49:2 (2019),  187–190
29. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  98–104
30. Epitaxial InGaAs/InAlAs/AlAs structures for heterobarrier varactors with low leakage current
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  16–23
31. The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  67–75
32. High-speed semiconductor vertical-cavity surface-emitting lasers for optical data-transmission systems (review)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  7–43
33. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1697
34. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1484–1488
35. Peaking of optical pulses in vertical-cavity surface-emitting lasers with an active region based on submonolayer InGaAs quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017),  17–23
36. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  87–94
37. Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1408–1413
38. A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  57–65
39. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79