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Voelskow M

Publications in Math-Net.Ru

  1. Diffusion of In atoms in SiO$_{2}$ films implanted with As$^{+}$ ions

    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  217–223
  2. Electron paramagnetic resonance in Ge/Si heterostructures with Mn-doped quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:4 (2019),  258–264
  3. Diffusion and interaction of In and As implanted into SiO$_2$ films

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1023–1029
  4. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1289–1294


© Steklov Math. Inst. of RAS, 2024