Chernov Mikhail Yur'evich

Publications in Math-Net.Ru

1. Effect of design and growth conditions of metamorphic In(Ga,Al)As/GaAs heterostructures on electrical properties of In$_{0.75}$Ga$_{0.25}$As/InAlAs two-dimensional channel
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  142–148
2. Reduction of misfit dislocation density in metamorphic heterostructures by design optimization of the buffer layer with non-linear graded composition profile
   
   Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  153–159
3. Terahertz generation in InAs epitaxial films
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:3 (2022),  51–54
4. Distribution of misfit dislocations and elastic mechanical stresses in metamorphic buffer InAlAs layers of various constructions
   
   Fizika Tverdogo Tela, 63:1 (2021),  85–90
5. Stimulated emission at a wavelength of $2.86 \mu$m from In(Sb, As)/In(Ga, Al)As/GaAs metamorphic quantum wells under optical pumping
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 110:5 (2019),  297–302
6. Effect of strongly mismatched GaAs and InAs inserts in a InAlAs buffer layer on the structural and optical properties of metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs quantum-confined heterostructures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019),  381–386
7. Optimization of the structural properties and surface morphology of a convex-graded In$_{x}$Al$_{1-x}$As ($x$ = 0.05–0.83) metamorphic buffer layer grown via MBE on GaAs (001)
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  127–132
8. Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  33–39