Sitnikova Alla Alekseevna

Publications in Math-Net.Ru

1. Stimulated emission at a wavelength of $2.86 \mu$m from In(Sb, As)/In(Ga, Al)As/GaAs metamorphic quantum wells under optical pumping
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 110:5 (2019),  297–302
2. Effect of strongly mismatched GaAs and InAs inserts in a InAlAs buffer layer on the structural and optical properties of metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs quantum-confined heterostructures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019),  381–386
3. Optimization of the structural properties and surface morphology of a convex-graded In$_{x}$Al$_{1-x}$As ($x$ = 0.05–0.83) metamorphic buffer layer grown via MBE on GaAs (001)
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  127–132
4. Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
   
   Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  56–62
5. Stress generation and relaxation in (Al, Ga)N/6$H$-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017),  67–74
6. Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1726
7. Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen
   
   Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  807–810
8. Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  66–71
9. Nanostructured magnetic films of iron oxides fabricated by laser electrodispersion
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  62–69
10. Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  40–48
11. Classification of dislocation-related luminescence lines in silicon
    
    Fizika Tverdogo Tela, 34:5 (1992),  1513–1521
12. Mechanism of microdefect formation during growing the dislocation-free silicon monocrystals
    
    Fizika Tverdogo Tela, 33:11 (1991),  3229–3234
13. Coesite nature of rodlike defects in Czochralski-grown and annealed silicon
    
    Fizika Tverdogo Tela, 32:12 (1990),  3659–3667
14. Stress fields and diffraction contrast of rod-like defects in silicon
    
    Fizika Tverdogo Tela, 30:7 (1988),  2040–2045
15. CARBON AND MANGANESE EFFECT ON THE FORMATION STRUCTURAL DEFECTS IN SILICON
    
    Zhurnal Tekhnicheskoi Fiziki, 58:11 (1988),  2272–2274
16. Study of $D$-type microdefects in $\mathrm{Si}$
    
    Fizika Tverdogo Tela, 29:9 (1987),  2623–2628
17. A study of the nature of microdefects in dislocation-free silicon single crystals
    
    Fizika Tverdogo Tela, 28:6 (1986),  1829–1833
18. Diffusion scattering on rod-like defects in oxygen-containing silicon crystals
    
    Fizika Tverdogo Tela, 27:3 (1985),  673–677
19. MEASUREMENT OF THE LOCAL THICKNESS OF CRYSTALS AND OBTAINING PROFILES OF DEFECT DISTRIBUTION ON DEGREES IN ION-ALLOYED SILICON LAYERS BY THE ELECTRON-MICROSCOPY METHOD
    
    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1330–1333