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Publications in Math-Net.Ru
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Adaptive holographic interferometry applied to determine the material parameters of photosensitive crystals
Optics and Spectroscopy, 129:4 (2021), 413–417
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Adaptive photodetector based on nonsteady-state photo-EMF for the detection of elastic deformations and stresses
Zhurnal Tekhnicheskoi Fiziki, 87:3 (2017), 408–412
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Phase transformations of amorphous binary semiconductor under pulsed laser irradiation
Fizika Tverdogo Tela, 33:1 (1991), 99–103
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STUDY OF CRYSTAL QUALITY OF ALXGA1-XAS SOLID-SOLUTIONS IN RELATION TO
SURFACE RECONSTRUCTION IN THE COURSE OF EPITAXIAL-GROWTH FROM
MOLECULAR-BEAMS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991), 42–44
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LINES OF POWER SEMICONDUCTING LASERS MADE BY THE MOLECULAR-BEAM EPITAXY
METHOD
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991), 31–34
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STUDY OF SEMICONDUCTING ALGAAS-GAAS HETEROLASER OBTAINED BY THE
MOLECULAR-BEAM EPITAXY TECHNIQUE
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991), 6–10
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NONSTATIONARY PHOTO-EMF UNDER THE 2-FREQUENCY NON-LINEAR EXCITATION
REGIME
Zhurnal Tekhnicheskoi Fiziki, 59:10 (1989), 126–129
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DYNAMICS OF FUSION AND CRYSTALLIZATION OF THIN AMORPHOUS IMPLANTED
SILICON LAYERS UNDER NANOSECOND LASER-PULSES
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989), 13–17
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LASER PURIFICATION OF SUBLAYERS FOR MOLECULAR-BEAM EPITAXY OF
GALLIUM-ARSENIDE - DIFFRACTION STUDY OF FAST ELECTRONS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989), 67–69
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NONSTATIONARY PHOTO-EMF IN THE NONLINEAR EXCITATION REGIME
Zhurnal Tekhnicheskoi Fiziki, 58:2 (1988), 429–431
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Исследование вольтамперных характеристик гетеропереходов
$p$-Pb$_{0.8}$Sn$_{0.2}$Te/$n$-PbTe$_{0.92}$Se$_{0.08}$
Fizika i Tekhnika Poluprovodnikov, 22:8 (1988), 1474–1478
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EFFECT OF INTRODUCTION ADMIXTURES ON LUMINESCENT PROPERTIES OF IMPLANTED
INDIUM-PHOSPHIDE AFTER LASER ANNEALING
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988), 176–181
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Reduction of luminescent properties of implanted indium-phosphide induced by pulse laser-emission
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986), 1217–1222
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Dynamics of melting of crystal indium-phosphide under nanosecond laser pulsations
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1119–1122
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Anomalous behavior of optical characteristics of indium-phosphide fusion, obtained by the nanosecond laser-pulse
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1115–1119
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INVESTIGATION OF GAAS FUSION PECULIARITIES UNDER 2-LONG-WAVE LASER
ANNEALING
Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2144–2148
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INJECTION INGAASP/INP HETEROLASER WITH DISTRIBUTED FEEDBACK OBTAINED BY
INTERFERENCE LASER ANNEALING
Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985), 2034–2036
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The effect of nanosecond laser-pulses on the melting of graphite and diamonds
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985), 921–924
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The effect of nanosecond laser-pulses on indium-phosphide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985), 916–920
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Photoluminescence of ion-implanted $Ga\,As$ after the nanosecond laser effect
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985), 368–371
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DUAL WAVELENGTH LASER ANNEALING OF SEMICONDUCTORS
Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984), 1408–1410
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Auger-electronic microanalysis of oxidized lead sulfide polycrystalline layer
Dokl. Akad. Nauk SSSR, 269:3 (1983), 607–609
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Интерференционный лазерный отжиг полупроводников
Fizika i Tekhnika Poluprovodnikov, 17:2 (1983), 235–241
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Новый фазовый переход в SiC и GaAs под действием пикосекундных
лазерных импульсов
Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:22 (1983), 1373–1376
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Аморфизация монокристаллического арсенида галлия под действием
пикосекундных световых импульсов
Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983), 897–900
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Эпитаксиальная кристаллизация напыленных слоев кремния на подложках
GaP в условиях интерференционного лазерного отжига
Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:14 (1983), 850–853
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