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Pakharukov Yurii Vavilovich

Publications in Math-Net.Ru

  1. Hierarchy of self-organisation and self-assembly processes on the example of film growth at the hydrocarbon-graphene nanofluid interface

    Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  565–574
  2. The features of acetylene pyrolysis in an atmosphere of inert gases in a cyclic compression reactor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:4 (2023),  31–34
  3. Increase in the permeability of a microcapillary with walls coated with corrugated graphene film

    Prikl. Mekh. Tekh. Fiz., 63:6 (2022),  116–121
  4. Carbon maldistribution during the martensitic transformation

    Chelyab. Fiz.-Mat. Zh., 4:4 (2019),  487–493
  5. Formation of a wave structure on the surface of a graphene film

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:9 (2019),  634–638
  6. Oil filtration in a porous medium in the presence of graphene nanoparticles

    Prikl. Mekh. Tekh. Fiz., 60:1 (2019),  37–40
  7. Oil displacement from a porous medium with the aid of a graphite suspension

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  3–8
  8. Process of micellization in aqueous solution surfactants how fase transition the first order

    Dokl. Akad. Nauk, 341:6 (1995),  755–757
  9. Electron stimulated process of micellization

    Dokl. Akad. Nauk, 332:5 (1993),  578–580
  10. A microscopic model of the labile state of stratifiable liquids

    Dokl. Akad. Nauk, 332:2 (1993),  164–166
  11. On relaxation state near the boundary of absolute instability at the weak disturbance

    Dokl. Akad. Nauk, 330:2 (1993),  188–190
  12. On the extension of the region of absolute instability under weak perturbation

    Dokl. Akad. Nauk, 324:6 (1992),  1183–1186
  13. CHARACTERISTICS OF RADIATION DEFECTS ANNEALING IN NEUTRON-ALLOYED SILICON

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992),  44–48
  14. Singularity of heat capacity under forced spinodal decomposition

    Dokl. Akad. Nauk SSSR, 320:6 (1991),  1372–1374
  15. Super broad-band luminescence in optical fibers: a numerical experiment

    Dokl. Akad. Nauk SSSR, 320:6 (1991),  1355–1357
  16. Влияние процесса радиационного дефектообразования на дифузионный профиль распределения алюминия в кремнии при электронном облучении

    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1686–1689
  17. Некоторые аспекты эффекта радиационного упорядочения

    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  909–911
  18. Radiation-induced shakeup in disordered materials

    Fizika Tverdogo Tela, 28:10 (1986),  3132–3133
  19. New hypothesis of disordered semiconductor radiation stability

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1320–1323
  20. Ionization-Induced Mechanism of Impurity Migration in Ion-Implanted Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  300–302
  21. Effect of Ionizing Radiation on the Decomposition of Solid Solutions

    Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  915–918


© Steklov Math. Inst. of RAS, 2025