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Publications in Math-Net.Ru
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Features of high-power uni-traveling-carrier InGaAs/InP photodiodes
Kvantovaya Elektronika, 53:11 (2023), 883–886
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New high-reliability optical transmission modules based on powerful superluminescent diodes in the spectral range 1.5 – 1.6 μm
Kvantovaya Elektronika, 53:7 (2023), 561–564
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Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes
Kvantovaya Elektronika, 52:6 (2022), 577–579
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High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm
Kvantovaya Elektronika, 51:10 (2021), 909–911
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Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides
Kvantovaya Elektronika, 51:4 (2021), 283–286
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Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
Kvantovaya Elektronika, 51:2 (2021), 133–136
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AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier
Kvantovaya Elektronika, 50:12 (2020), 1123–1125
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Superluminescent diodes in the spectral range of 1.5–1.6 μm based on strain-compensated AlGaInAs/InP quantum wells
Kvantovaya Elektronika, 50:9 (2020), 830–833
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1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide
Kvantovaya Elektronika, 50:6 (2020), 600–602
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AlGaInAs/InP semiconductor lasers with an increased electron barrier
Kvantovaya Elektronika, 49:6 (2019), 519–521
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