Nechaev Dmitrii Valer'evich

Publications in Math-Net.Ru

1. Two-dimensional excitons in multiple GaN/AlN monolayer quantum wells
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021),  507–513
2. Structural and dynamical properties of short-period GaN/AlN superlattices: Experiment and theory
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1397
3. An increase of threading dislocations filtering efficiency in AlN/$c$-Al$_{2}$O$_{3}$ templates with faceted surface morphology during a growth by molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  26–30
4. Decreasing density of grown-in dislocations in AlN/$c$-sapphire templates grown by plasma-activated molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  36–39
5. Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1519
6. Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells
   
   Kvantovaya Elektronika, 49:6 (2019),  535–539
7. Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1663–1667
8. Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE
   
   Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  526
9. Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  515
10. Stress generation and relaxation in (Al, Ga)N/6$H$-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017),  67–74
11. Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III–N heterostructures by molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:5 (2017),  60–67
12. AlGaN nanostructures with extremely high quantum yield at 300 K
    
    Fizika Tverdogo Tela, 58:11 (2016),  2180–2185
13. Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  921–926
14. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
15. X-ray diffractometry of AlN/$c$-sapphire templates obtained by plasma-activated molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  61–69