Arsent'ev Ivan Nikitich

Publications in Math-Net.Ru

1. Properties of compliant porous silicon-based substrates formed by two-stage etching
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1021–1026
2. Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  704–710
3. Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  86–95
4. Spectroscopic studies of integrated GaAs/Si heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  34–40
5. Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  491–503
6. Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  346–354
7. On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1584–1592
8. Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1141–1151
9. Investigation of the current–voltage characteristics of new MnO$_{2}$/GaAs(100) and V$_{2}$O$_{5}$/GaAs(100) heterostructures subjected to heat treatment
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1074–1079
10. Comprehensive study of the nanoporous si layer influence on atomic and electron structure and optical properties of A$^{\mathrm{III}}$N/por-Si heterostructures grown by plasma assisted molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1010–1016
11. Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  70–76
12. Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures
    
    Kvantovaya Elektronika, 49:6 (2019),  545–551
13. Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1553–1562
14. Effect of conditions of electrochemical etching on the morphological, structural, and optical properties of porous gallium arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1041–1048
15. Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  881–890
16. Influence of substrate misorientation on the composition and the structural and photoluminescence properties of epitaxial layers grown on GaAs(100)
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  118–124
17. Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1160–1167
18. Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1131–1137
19. Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  124–132
20. Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1283–1294
21. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  869–876
22. SPECTRAL CHARACTERISTICS OF INGAASP/GAAS(111) LPE-LASERS (LAMBDA=0.8MU-M) DESIGNED FOR THE PUMPING OF YAG-ND3+
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989),  45–49
23. Квантово-размерные InGaAsP/GaAs (${\lambda=0.86\div0.78}$ мкм) лазеры раздельного ограничения (${J_{\text{п}}=100\,\text{А/см}^{2}}$, КПД${}=59$%)
    
    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1031–1034
24. POWER CONTINUOUS INGAASP/GAAS HETEROLASER WITH THE DIELECTRIC MIRROR (IPOR=100A/CM2,D=1.1WATT,EFFICIENCY=66-PERCENT,T=10-DEGREES-C
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988),  699–702
25. MULTI-LAYERED STRUCTURES IN THE JN-GA-AS-P SYSTEM PREPARED BY THE LIQUID EPITAXY METHOD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:7 (1988),  593–597
26. Low-Threshold Quantum-Dimensional InGaAsP/GaAs Double-Heterostructure Lasers of Separate Limitation Produced by Liquid Epitaxy (${\lambda=0.86}$ $\mu m$, ${I_{\text{п}}=90\,\text{A/cm}^{2}}$, ${L=\infty}$; ${I_{\text{п}}=165\,\text{A/cm}^{2}}$, ${L=1150}$ $\mu m$, ${T=300}$ K)
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1501–1503
27. Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å
    
    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  178–181
28. Quantum-Dimensional InGaAsP/GaAs Separate-Limitation Double-Heterostructure Lasers Produced by Liquid-Epitaxy Method (${\lambda=0.79}\,\mu m,$ ${I_{\text{п}}=124\,\text{A/cm}^{2}}$, ${T=300}$ K)
    
    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  162–164
29. Visible $In\,Ga\,As\,P/Ga\,As\,P$ separate confinement lasers, manufactured by the liquid epitaxy-method ($\lambda=0.65\div0.67$ mu-m, $I_n=3\div0.8\,\text{kA}/\text{cm}^{2}$; $P=5$ mVt, $\lambda=0.665$ mu-m, $T=300$ K)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  372–374
30. Photoluminescence of InGaAsP/GaAs Quantum-Dimensional Heterostructures Produced by the Method of Liquid Epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2145–2149
31. Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in Al$-$Ga$-$As and In$-$Ga$-$As$-$P
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  708–712
32. $0.677 \mu m$ – Continuous Injection InGaAsP/GaAsP DH Laser with Selective Limitation Produced by Liquid Epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1115–1118
33. Auger Profiles of Composition and Luminescent Studies of Liquid-Phase InGaAsP Heterostructures with Active Regions ${(1.5\div5)\cdot10^{-6}}$  cm
    
    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1108–1114
34. Continuous Separately-Limited Laser on InGaAsP/GaAs Double Heterostructures Grown by Liquid Epitay of 77 mWt Power (${T=300}$ K, ${\lambda=0.87}$ $\mu$m)
    
    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  136–138
35. Continuous short-wave ($\lambda=0,677\,\mu m$) injection-laser based on $In\,Ga\,As\,P/Ga\,As\,P$ RO DGS with $10$ mVt power
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1153–1157
36. Band lasers based on PO $In\,Ga\,As\,P/Ga\,As$ DHS ($\lambda\simeq0.87\,\mu m$) with the thin active area
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  205–209
37. Инжекционные РО InGaAsP/InP ДГС лазеры с порогом $300\,\text{А/см}^{2}$ (четырехсколотые образцы, ${\lambda=1.25}$ мкм, ${T=300}$ K)
    
    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2057–2060
38. Спонтанные и когерентные излучательные переходы в InGaAsP/InP ДГС с тонкой активной областью (${d_{\text{а}}=2\cdot10^{-5}\div2\cdot10^{-6}}$ см), полученные методом жидкостной эпитаксии
    
    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2041–2045
39. Низкопороговые инжекционные InGaAsP/GaAs ДГС лазеры с раздельным ограничением, полученные методом жидкостной эпитаксии (${\lambda=0.78\div0.87}$ мкм, ${I_{\text{пор}}=460\,\text{А/см}^{2}}$, ${T=300}$ K)
    
    Fizika i Tekhnika Poluprovodnikov, 18:9 (1984),  1655–1659
40. Low-Threshold Visible GalnAsP/GaAsP DH Lasers (${T=300}$ K, ${\lambda=0.70{-}0.66}\,\mu m,$ ${I_{\text{thresh}}\simeq1.5{-}3.2\,\text{кА}/\text{cm}^{2}}$)
    
    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  757–758
41. Visible Low-Threshold Pulsed and Continuous InGaAsP/InGaP/GaAs DH Lasers in the $0.73{-}0.79 \mu m$ Region (${T=300}$ K, ${I_{n}=3.5{-}1.3\,\text{mA}/\text{cm}^{2}}$)
    
    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  162–165
42. Температурная зависимость порога генерации в ДГ-InGaAsP/GaAs-структурах (${\lambda_{\text{ген}}=729}$ нм, ${T\geqslant300}$ K, ${J_{\text{пор}}\geqslant5\cdot10^{3}\,\text{А/см}^{2}}$)
    
    Fizika i Tekhnika Poluprovodnikov, 17:5 (1983),  843–846
43. Фотолюминесцентные исследования перераспределения неравновесных носителей заряда в InGaAsP/InP с двумя активными областями
    
    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  714–717
44. Фотолюминесценция двойной гетероструктуры при возбуждении широкозонного эмиттера
    
    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  242–246