Leiste Harald

Publications in Math-Net.Ru

1. Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  86–95
2. Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  491–503
3. Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1141–1151
4. Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  70–76
5. Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures
   
   Kvantovaya Elektronika, 49:6 (2019),  545–551
6. Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1553–1562
7. Influence of substrate misorientation on the composition and the structural and photoluminescence properties of epitaxial layers grown on GaAs(100)
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  118–124
8. Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types
   
   Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  124–132
9. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  869–876