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Publications in Math-Net.Ru
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Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 699–703
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Capacitance spectroscopy of heteroepitaxial AlGaAs/GaAs $p$–$i$–$n$ structures
Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1072–1078
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A study of ohmic contacts of power photovoltaic converters
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019), 12–15
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Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs
Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018), 789–792
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Effect of dislocation-related deep levels in heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs $p$–$i$–$n$ structures on the relaxation time of nonequilibrium carriers
Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 177–183
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Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism
Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 481–496
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Study of deep levels in GaAs $p$–$i$–$n$ structures
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 941–945
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