Podoskin Aleksandr Aleksandrovich

Publications in Math-Net.Ru

1. Compact high-power nanosecond-duration laser pulse sources (940 nm) based on “semiconductor laser – thyristor switch” vertical stacks
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  7–10
2. A pulsed photoactivatable switch based on a semiconductor laser and an AlGaAs/GaAs high-voltage photodiode
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  703–708
3. Drift transport of charge carriers in silicon $p^+$–$n$–$n^+$ structures at temperatures $\le$ 100 mK
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  415–423
4. Hybrid stacks of thyristor switch – semiconductor laser based on AlInGaAsP/InP heterostructures for high-power pulsed laser sources (1400–1500 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  165–170
5. Low-voltage current switches based on AlInGaAsP/InP thyristor heterostructures for nanosecond pulsed laser emitters (1.5 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  161–164
6. The effect of the cavity length on the output optical power of semiconductor laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  96–105
7. Dynamics of laser generation in single-mode microstripe semiconductor laser bar (1065 nm) operating in gain-swithching mode
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  42–48
8. Thyristor switches based on hetero and homostructures (Al)GaAs/GaAs for generating high-frequency nanosecond current pulses
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  43–46
9. Temperature dependence of the output optical power of semiconductor lasers–thyristors based on AlGaAs/GaAs/InGaAs heterostructures
   
   Kvantovaya Elektronika, 54:4 (2024),  218–223
10. Lateral mode selection of single-mode laser diode microstripe bar (1050 nm) in external cavity
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  693–699
11. High-current low-voltage switches for nanosecond pulse durations based on thyristor (Al)GaAs/GaAs homo- and heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  678–683
12. Luminescence in $p$–$i$–$n$ structures with compensated quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  663–673
13. Switching (turn-on) dynamics of low-voltage InP homothyristors
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  295–300
14. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
15. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence
    
    Kvantovaya Elektronika, 53:5 (2023),  374–378
16. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch
    
    Kvantovaya Elektronika, 53:1 (2023),  11–16
17. Quasi-cw high-power laser diode mini bars (λ=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide
    
    Kvantovaya Elektronika, 53:1 (2023),  6–10
18. Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses
    
    Kvantovaya Elektronika, 53:1 (2023),  1–5
19. High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses
    
    Kvantovaya Elektronika, 52:12 (2022),  1152–1165
20. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm
    
    Kvantovaya Elektronika, 52:2 (2022),  171–173
21. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
22. Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  460–465
23. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
    
    Kvantovaya Elektronika, 51:10 (2021),  912–914
24. Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures
    
    Kvantovaya Elektronika, 51:2 (2021),  129–132
25. Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures
    
    Kvantovaya Elektronika, 51:2 (2021),  124–128
26. Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  734–742
27. Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  484–489
28. Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  478–483
29. Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  452–457
30. Triple integrated laser–thyristor
    
    Kvantovaya Elektronika, 50:11 (2020),  1001–1003
31. Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  839–843
32. Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  816–823
33. Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  7–11
34. Double integrated laser-thyristor
    
    Kvantovaya Elektronika, 49:11 (2019),  1011–1013
35. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  31–37
36. Mapping of laser diode radiation intensity by atomic-force microscopy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015),  8–15