Podoskin Aleksandr Aleksandrovich

Publications in Math-Net.Ru

1. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence
   
   Kvantovaya Elektronika, 53:5 (2023),  374–378
2. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch
   
   Kvantovaya Elektronika, 53:1 (2023),  11–16
3. Quasi-cw high-power laser diode mini bars (λ=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide
   
   Kvantovaya Elektronika, 53:1 (2023),  6–10
4. Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses
   
   Kvantovaya Elektronika, 53:1 (2023),  1–5
5. High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses
   
   Kvantovaya Elektronika, 52:12 (2022),  1152–1165
6. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm
   
   Kvantovaya Elektronika, 52:2 (2022),  171–173
7. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
8. Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  460–465
9. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
   
   Kvantovaya Elektronika, 51:10 (2021),  912–914
10. Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures
    
    Kvantovaya Elektronika, 51:2 (2021),  129–132
11. Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures
    
    Kvantovaya Elektronika, 51:2 (2021),  124–128
12. Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  734–742
13. Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  484–489
14. Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  478–483
15. Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  452–457
16. Triple integrated laser–thyristor
    
    Kvantovaya Elektronika, 50:11 (2020),  1001–1003
17. Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  839–843
18. Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  816–823
19. Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  7–11
20. Double integrated laser-thyristor
    
    Kvantovaya Elektronika, 49:11 (2019),  1011–1013
21. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  31–37