Galiev Rinat Radifovich

Publications in Math-Net.Ru

1. Особенности формирования мезаструктуры методом электронно-лучевой литографии в полупроводниковых соединениях на основе GaAs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  42–44
2. Enhanced laser pulse confinement in a photoconductive terahertz emitter through near-field sapphire-fiber microlens
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025),  46–48
3. Efficient THz emission by a photoconductive emitter with tight photocarrier confinement within high-aspect ratio plasmonic electrodes
   
   Optics and Spectroscopy, 132:1 (2024),  105–110
4. Microdisk lasers based on InGaAs/GaAs quantum dots monolithically integrated with a waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  107–113
5. Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide
   
   Optics and Spectroscopy, 131:11 (2023),  1483–1485
6. Temperature degradation of 2.3, 3.2 and 4.1 THz quantum cascade lasers
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  705–710
7. 3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022),  16–19
8. 3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  989–994
9. Experimental studies of 1.5–1.6 μm high-power single-frequency semiconductor lasers
   
   Kvantovaya Elektronika, 50:2 (2020),  143–146
10. Plasmonic photoconductive antennas for terahertz pulsed spectroscopy and imaging systems
    
    Optics and Spectroscopy, 126:5 (2019),  663–669
11. The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN НЕМТ channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017),  9–14
12. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1395–1400
13. MHEMT with a power-gain cut-off frequency of $f_{\mathrm{max}}$ = 0.63 THz on the basis of a In$_{0.42}$Al$_{0.58}$As/In$_{0.42}$Ga$_{0.58}$As/In$_{0.42}$Al$_{0.58}$As/GaAs nanoheterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  73–76