Zhilyaev Yury Vasilyvich

Publications in Math-Net.Ru

1. Local thermoelectric effects in wide-gap semiconductors
   
   Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  921–924
2. Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  91–96
3. Экспериментальное наблюдение дырок в $n$-GaAs, высвободившихся в результате оже-распада локализованных состояний
   
   Fizika i Tekhnika Poluprovodnikov, 25:4 (1991),  713–717
4. CAAS EPITAXIAL LAYERS WITH BACKGROUND ACCEPTOR ALLOYING
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991),  28–32
5. Resonance exciton luminescence of $\mathrm{GaAs}$: transition from the polariton model to approximation of independent excitons and photons
   
   Fizika Tverdogo Tela, 32:6 (1990),  1801–1805
6. COMPOSITION STOICHIOMETRY IN GAAS FILMS GROWN BY THE GAS-PHASE EPITAXY METHOD
   
   Zhurnal Tekhnicheskoi Fiziki, 60:11 (1990),  201–203
7. ANALYSIS OF THE GAS-PHASE COMPOSITION IN THE SOURCE ZONE BY THE UV ABSORPTION UNDER THE GAAS GROWING IN THE CHLORIDE GAS-TRANSPORT SYSTEM
   
   Zhurnal Tekhnicheskoi Fiziki, 60:7 (1990),  143–150
8. EFFECT OF SUBSTRATE EXCHANGE WITH GAS-PHASE ON CRYSTALLIZATION FROM A GAS-TRANSPORT SYSTEM
   
   Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990),  90–96
9. Низкотемпературная фотолюминесценция эпитаксиальных пленок фосфида галлия, выращенных на кремниевых подложках
   
   Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1303–1305
10. Перезахват неосновных носителей в условиях фотоионизации в эпитаксиальном $n$-GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  82–92
11. OPTIMIZATION OF THE MODE OF GALLIUM-ARSENIDE GROWTH IN CHLORIDE GAS-TRANSPORT SYSTEM
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:24 (1990),  77–82
12. MATHEMATICAL-MODELING OF PROCESSES IN CHLORIDE GAS-TRANSPORT REACTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 58:6 (1988),  1229–1233
13. Использование спектров поляритонной люминесценции для характеристики качества кристаллов GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1885–1888
14. Исследование субнаносекундного включения арсенид-галлиевых тиристорных структур
    
    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1134–1137
15. VISUALIZATION OF THE SUBNANOSECOND SWITCHING OF ARSENIDE-GALLIUM-DIODE STRUCTURES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:16 (1988),  1526–1530
16. HIGH-VOLTAGE ARSENIDE-GALLIUM FORCE DIODES OF LARGE SQUARE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988),  1153–1156
17. PREDOMINANT RECOMBINATION CENTERS IN PARA-GAAS LAYERS, OBTAINED BY PRECIPITATION FROM THE GAS-PHASE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  181–185
18. Photoelectric Laser Magnetospectroscopy of Shallow Donors in Highly Pure GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1771–1777
19. Propagation of Switched State in Gallium-Arsenide Thyristors
    
    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  129–133
20. Polariton luminescence in $\mathrm{GaAs}$
    
    Fizika Tverdogo Tela, 28:9 (1986),  2688–2695
21. Intensity excitation effect on polariton luminescence in $\mathrm{GaAs}$
    
    Fizika Tverdogo Tela, 28:1 (1986),  201–207
22. COMPARATIVE INVESTIGATION OF THE SWITCHING ON PROCESSES OF GALLIUM-ARSENIDE AND SILICON THYRISTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 56:7 (1986),  1343–1347
23. Subnanosecond connection of arsenide-gallium thyristors
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:15 (1986),  925–928
24. SWITCHED ON STATE PROPAGATION IN GAAS THYRISTORS OF THE LARGE AREA
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:23 (1984),  1430–1433
25. HIGH-POWER, HIGH-SPEED COMMUTATORS BASED ON GAAS DINISTOR STRUCTURES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984),  385–388
26. MAIN PARAMETERS OF SWITCHING-ON OF ARSENIDE-GALLIUM THYRISTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 53:3 (1983),  573–575
27. Распространение включенного состояния в арсенидгаллиевых тиристорах
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:9 (1983),  546–549
28. Силовые диоды с барьером Шоттки на арсениде галлия
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983),  414–417