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Publications in Math-Net.Ru
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Photothreshold of an $\alpha$-GeS layered crystal: first-principles calculation
Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 699–701
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First-principles calculation of the photothreshold of a $\beta$-GaS layered crystal
Fizika Tverdogo Tela, 58:9 (2016), 1707–1708
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Polarization-induced and strain-induced features of the fundamental absorption edge in $\mathrm{GeS}$
Fizika Tverdogo Tela, 32:11 (1990), 3301–3305
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Charge distribution and chemical bonding in germanium selenide
Fizika Tverdogo Tela, 31:3 (1989), 21–24
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Deformational Potentials of Band Edges of A$^{\text{IV}}$B$^{\text{VI}}$ Laminated Semiconductor Compounds
Fizika i Tekhnika Poluprovodnikov, 21:9 (1987), 1732–1734
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Valence electron density distribution in $\mathrm{GeSe}$
Fizika Tverdogo Tela, 28:1 (1986), 275–277
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Space group band representations of $\mathrm{A}_{4}\mathrm{B}_{6}$ layered crystal
Fizika Tverdogo Tela, 27:7 (1985), 2098–2100
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Indirect Exciton in
Germanium Selenide
Fizika i Tekhnika Poluprovodnikov, 19:11 (1985), 2059–2061
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Absorption Spectra of
SnSe near the Straight Edge
Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1501–1503
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Dependence of SnSe Absorption Edge on Hydrostatic Pressure
Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 282–285
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Ýêñèòîííûé êðàé ïîãëîùåíèÿ ìîíîêðèñòàëëîâ
GeSe
Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 738–740
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