Nikishin S A

Publications in Math-Net.Ru

1. Молекулярно-пучковая эпитаксия однодоменного арсенида галлия на (001) кремнии, пассивированном водородом
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:2 (1992),  1–5
2. DETERMINATION OF SUBSTRATE SURFACE-TEMPERATURE INSITU UNDER MBE OF GAAS(001) USING REFLECTED FAST ELECTRON-DIFFRACTION
   
   Zhurnal Tekhnicheskoi Fiziki, 61:1 (1991),  174–178
3. MOLECULAR-BEAM EPITATY (MBE) OF GAAS ON SI (001) SURFACE, SATURATED WITH HYDROGEN
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991),  19–23
4. CONTROL OF THE LENGTH OF TRANSITION LAYERS UNDER LIQUID-PHASE HETEROEPITAXY (LPHE) IN THE INGAASP/INP SYSTEM
   
   Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990),  123–128
5. STABILITY OF PROPERTIES (COMPOSITION, STRUCTURE) OF HYDROGEN-PASSIVATED SI(001) SURFACE DURING PREEPITAXIAL THERMAL-TREATMENT
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:19 (1990),  66–69
6. EVOLUTION OF THE (OO)-REFLEX OF THE RFED PICTURE AT THE INITIAL-STAGES OF GAAS(001) MBE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  41–46
7. CHARACTERISTICS OF OBLITERATION OF WAVE-GUIDE PROFILE SURFACE IN INGAASP/INP ROS LASERS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  5–9
8. DIFFUSION-MODEL OF THE EPITAXIAL-GROWTH OF ALXGA1-XAS SOLID-SOLUTIONS FROM LIMITED FUSION
   
   Zhurnal Tekhnicheskoi Fiziki, 58:2 (1988),  355–362
9. DFB-GENERATION IN INGAASP/INP-LASERS WHERE (LAMDA=1.5-1.6 MU-M) WITH A COMPOUND ACTIVE LAYER
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:12 (1988),  1082–1088
10. CHARACTERISTICS OF THE GENERATION IN INGAASP/INP HIGHLY DETUNED ROS-LASERS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  267–273
11. CURRENT CONTROL BY CROSS-SECTIONS OF THE THICKNESS AND CURRENT DEOXIDATION OF LAYERS OF ALGAAS CULTIVATED IN GROOVES
    
    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  778–782
12. Low-threshold injection heterolasers with electric limits developed by the pulse laser effect
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:15 (1987),  913–918
13. Heterolasers with distributed feedback ($\lambda=1.55$ mu-m), operating in continuous regime at room-temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  513–517
14. Time characteristics of $In\,Ga\,As\,P/In\,P$ emission of injection-lasers with quantum-dimensional active layers, obtained by the liquid epitaxy method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  141–146
15. Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  132–136
16. INFLUENCE OF GROWING CONDITIONS ON PARAMETERS OF MULTIWAVE DHS-LASERS
    
    Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986),  1142–1149
17. LIQUID EPITAXY, CONTROLLED BY TEMPERATURE AND CURRENT CHANGES (LECTCC)
    
    Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986),  353–360
18. Experimental Observation of Size-Quantization Effects in Heterolaser Structures with Random Variations of Quantum-Size Active-Layer Thickness
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1222–1226
19. Continuous single-mode injection $Ga\,Al\,As$ heterolasers, obtained by gasophase and liquid-phase epitaxial hybrid technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:10 (1986),  577–582
20. Formation of transition layers in heterostructures based on $Ga\,As-Al\,As$ solid-solutions during the liquid-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986),  335–341
21. Low-threshold in $In\,Ga\,As\,P/In\,P$ lasers of divided limitation with $\lambda=1.3$-mu-m and $\lambda =1.55$-mu-m ($I_{\text{threshold}}=600-700\,\text{A/cm}^{2}$)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  210–215
22. Influence of random changes in the quantum-dimensional active layer thickness on heterolaser emitting characteristics
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  205–210
23. MULTIWAVE LASER EMITTERS BASED ON ALXGA(1-X)AS SOLID-SOLUTIONS
    
    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  1962–1966
24. Separate-confinement $Al\,Ga\,As/Ga\,As$ heterolasers obtained by the modified method of liquid epitaxy ($I_{\text{p}}=260$ A/cm$^{2}$, $\lambda= 0.86-0.83\,\mu m$, $T= 300$ K)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985),  1409–1413
25. Epitaxy $In\,Ga\,As\,P/In\,P$ from the migrating limited liquid-phase volume
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  961–968
26. DIFFUSION SUBSTANCE TRANSFER IN CRYSTALLIZED MULTI-COMPONENT SOLUTION-FUSION
    
    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  2004–2010
27. NEW SOLUTIONS AND APPLICATIONS IN ELECTRO-LIQUID EPITAXY .2.
    
    Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984),  1128–1132
28. NEW SOLUTIONS AND APPLICATIONS OF ELECTRO-LIQUID EPITAXY .1.
    
    Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984),  938–942
29. ANALYSIS OF MASS-TRANSFER DURING GALLIUM-ARSENIDE ELECTRIC-LIQUID EPITAXY
    
    Zhurnal Tekhnicheskoi Fiziki, 53:3 (1983),  538–544