Syrkin A L

Publications in Math-Net.Ru

1. REVERSED MESA-STRUCTURE FROM SILICON-CARBIDE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992),  28–31
2. Высокотемпературный диод Шоттки Au$-$SiC-$6H$
   
   Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  328–333
3. Связь желтой электролюминесценции в $6H$-SiC с глубокими центрами
   
   Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1384–1390
4. Разновидность неклассического термоинжекционного тока в карбид-кремниевых $p{-}n$-структурах
   
   Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1813–1818
5. Неклассический термоинжекционный ток в карбид-кремниевых $p{-}n$-структурах
   
   Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  647–651
6. SIC-6H FIELD TRANSISTOR WITH RECORD TRANSCONDUCTANCE FOR CARBIDE-SILICON TRANSISTORS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:16 (1989),  36–42
7. Температурная зависимость напряжения лавинного пробоя в карбид-кремниевых $p{-}n$-переходах
   
   Fizika i Tekhnika Poluprovodnikov, 22:9 (1988),  1574–1579
8. Синие SiC-$6H$-светодиоды
   
   Fizika i Tekhnika Poluprovodnikov, 22:4 (1988),  664–669
9. Электрические характеристики эпитаксиальных $p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$
   
   Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  298–300
10. Электростатические свойства SiC-$6H$-структур с резким $p{-}n$-переходом
    
    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  133–136
11. NEGATIVE TEMPERATURE-COEFFICIENT OF BREAKDOWN PRESSURE IN SILICON-CARBIDE R-P TRANSITIONS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:6 (1988),  545–547
12. HIGH-TEMPERATURE SIC-6H FIELD TRANSISTOR WITH THE P-N LOCKS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:4 (1988),  289–293
13. Dinistor on silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:16 (1987),  991–993
14. Capacity Spectroscopy of p${-}$n Junctions Based on Epitaxial $4H$-SiC Produced by Ionic Implantation of Al
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2169–2172
15. Structures with Ionically Implanted p${-}$n Junction Based on Epitaxial $4H$-SiC with $S$-Like Current–Voltage Characteristic
    
    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1654–1657
16. Study of Current-Voltage Characteristics of Diode Structures Based on Silicon Carbide
    
    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  844–848
17. Tension limitations obtained by carbide-silicon R-P-structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986),  773–776
18. 3-color blue-green-red-indicator formed on monocrystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  541–543
19. Reactive ion-plasma beam etching of silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  240–243
20. Capacity-Spectroscopic Study of Deep Levels in SiC
    
    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  114–117
21. Tunnel-diode based on $Si\,C$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  976–978
22. RECTIFIER DIODE BASED ON SILICON-CARBIDE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:17 (1984),  1053–1056