Vodakov Yu A

Publications in Math-Net.Ru

1. Effect of impurities and inherent defects on the physicomechanical properties of silicon carbide single crystals
   
   Fizika Tverdogo Tela, 34:9 (1992),  2748–2752
2. Светодиоды на основе карбида кремния, облученного быстрыми электронами
   
   Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1857–1860
3. Ультрафиолетовые карбид-кремниевые фотоприемники
   
   Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  1008–1014
4. Эффективные зеленые светодиоды на карбиде кремния
   
   Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  107–110
5. Epr in the $2$ mm range and optical intrinsic defect absorption in $4H$ $\mathrm{SiC}$ epitaxial layers
   
   Fizika Tverdogo Tela, 33:11 (1991),  3315–3326
6. Образование и эволюция нитей лавинного тока в обратносмещенных $p{-}n$-переходах на основе $6H$-SiC
   
   Fizika i Tekhnika Poluprovodnikov, 25:7 (1991),  1209–1216
7. Люминесценция эпитаксиальных слоев $6H$-SiC, облученных быстрыми электронами
   
   Fizika i Tekhnika Poluprovodnikov, 25:4 (1991),  762–766
8. ELECTROLUMINESCENCE OF 6H-SIC, ALLOYED BY GA AND N
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  25–30
9. VIOLET LIGHT DIODES BASED ON 6H/4H-SIC[GA,N] HETEROEPITAXIAL LAYERS GROWN BY THE SUBLIMATION SANDWICH-METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  19–22
10. HIGH-TEMPERATURE LUMINESCENCE IN 6H-SIC IN ALLOYED GA AND N
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  38–41
11. CATHODIC LUMINESCENCE OF SIC-6H ALLOYED BY GA UNDER THE HIGH DEGREE OF EXCITATION
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989),  60–64
12. PHOTODIODES WITH EMISSION IN THE GREEN AREA OF SPECTRUM BASED ON HETEROEPITAXIAL LAYERS OF SILICON-CARBIDE OF 4H-POLYTYPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:24 (1988),  2222–2226
13. CATHODE AMPLIFICATION IN P-N TRANSITIONS ON SILICON-CARBIDE
    
    Zhurnal Tekhnicheskoi Fiziki, 57:12 (1987),  2405–2407
14. Electric Properties of $p{-}n{-}n^{+}$ Structure in Silicon Carbide Produced by Ionic Doping of Aluminum
    
    Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1685–1689
15. Peculiarities of High-Temperature Luminescence of Boron-Doped Silicon Carbide Epitaxial Layers
    
    Fizika i Tekhnika Poluprovodnikov, 21:2 (1987),  207–211
16. Effect of Growth Conditions on Thermal Stability of Defect Luminescence with D$_1$ Spectrum in Neutron-Irpadiated $6H$-SiC
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2153–2158
17. Origination of Defect Luminescence with D$_{1}$ Spectrum in $6H$-SiC under Generation of Excess Carbon Vacancies
    
    Fizika i Tekhnika Poluprovodnikov, 20:8 (1986),  1433–1437
18. Cathodoamplification in Schottky barriers on silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986),  1464–1468
19. Parametric voltage stabilizer based on silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  261–264
20. Collision Ionization in Silicon-Carbide Polytypes
    
    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  814–818
21. Исследование шума лавинного фотодиода на основе $6H$-карбида кремния
    
    Fizika i Tekhnika Poluprovodnikov, 18:12 (1984),  2146–2149
22. Cathodoluminescence of SiC Ion-Doped by Aland Ar
    
    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  700–703
23. CHARACTERISTICS OF CASCADE BREAKDOWN IN ALPHA-CARBIDE SILICON-MATERIAL WITH NATURAL SUPER-LATTICE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:5 (1984),  303–306
24. Определение концентрации примеси в карбиде кремния $n$-типа с помощью локального пробоя контакта металл–полупроводник
    
    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  1115–1118