|
|
Publications in Math-Net.Ru
-
Defect formation under the annealing of neutron-irradiated $\mathrm{SiC}$
Fizika Tverdogo Tela, 30:9 (1988), 2606–2610
-
Peculiarities of High-Temperature Luminescence of Boron-Doped Silicon Carbide Epitaxial Layers
Fizika i Tekhnika Poluprovodnikov, 21:2 (1987), 207–211
-
The paramagnetic and electric properties of the neutron transmutation produced phosphorus impurity in $6H$ – $\mathrm{SiC}$
Fizika Tverdogo Tela, 28:6 (1986), 1659–1664
-
Effect of Growth Conditions on Thermal Stability of Defect Luminescence with D$_1$ Spectrum in Neutron-Irpadiated
$6H$-SiC
Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2153–2158
-
Origination of Defect Luminescence with D$_{1}$ Spectrum in $6H$-SiC under Generation of Excess Carbon Vacancies
Fizika i Tekhnika Poluprovodnikov, 20:8 (1986), 1433–1437
-
Parametric voltage stabilizer based on silicon-carbide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986), 261–264
-
Lithium diffusion, solubility and electron-paramagnetic-res in $\mathrm{SiC}$
Fizika Tverdogo Tela, 27:11 (1985), 3479–3481
-
Отжиг радиационных дефектов в $n$-SiC ($6H$), обученном
нейтронами
Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 2014–2019
-
Электрические свойства сильно легированного
$6H\text{-SiC}\langle\text{Al}\rangle$, облученного нейтронами
Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1911–1913
-
Прыжковая проводимость в $6H$-SiC, легированном Al
Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 115–118
© , 2024