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Publications in Math-Net.Ru
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Studying the sensitivity of graphene for biosensor applications
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 3–6
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Светодиоды на основе карбида кремния, облученного быстрыми
электронами
Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 1857–1860
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Ультрафиолетовые карбид-кремниевые фотоприемники
Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1008–1014
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Эффективные зеленые светодиоды на карбиде кремния
Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 107–110
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Образование и эволюция нитей лавинного тока в обратносмещенных
$p{-}n$-переходах на основе $6H$-SiC
Fizika i Tekhnika Poluprovodnikov, 25:7 (1991), 1209–1216
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Люминесценция эпитаксиальных слоев $6H$-SiC, облученных быстрыми
электронами
Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 762–766
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NITROGEN ALLOYING OF SIC EPITAXIAL LAYERS UNDER THE SUBLIMATION
SANDWICH-METHOD GROWTH IN VACUUM
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 33–37
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ELECTROLUMINESCENCE OF 6H-SIC, ALLOYED BY GA AND N
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 25–30
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PHOTODIODES WITH EMISSION IN THE GREEN AREA OF SPECTRUM BASED ON
HETEROEPITAXIAL LAYERS OF SILICON-CARBIDE OF 4H-POLYTYPE
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:24 (1988), 2222–2226
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$P^{+}-\pi-N^{+}$-structures based on silicon-carbide with double injection
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1247–1251
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Origination of structural ruptures in epitaxial layers of silicon-carbide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 641–645
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Parametric voltage stabilizer based on silicon-carbide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986), 261–264
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Collision Ionization in Silicon-Carbide Polytypes
Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 814–818
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CHARACTERISTICS OF CASCADE BREAKDOWN IN ALPHA-CARBIDE SILICON-MATERIAL
WITH NATURAL SUPER-LATTICE
Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:5 (1984), 303–306
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