Krasovskii V V

Publications in Math-Net.Ru

1. Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å
   
   Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  178–181
2. Quantum-Dimensional InGaAsP/GaAs Separate-Limitation Double-Heterostructure Lasers Produced by Liquid-Epitaxy Method (${\lambda=0.79}\,\mu m,$ ${I_{\text{п}}=124\,\text{A/cm}^{2}}$, ${T=300}$ K)
   
   Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  162–164
3. Photoluminescence of InGaAsP/GaAs Quantum-Dimensional Heterostructures Produced by the Method of Liquid Epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2145–2149
4. Lifetimes of Eigen Radiative Transitions in Quantum-Dimensional Heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1816–1822
5. Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in Al$-$Ga$-$As and In$-$Ga$-$As$-$P
   
   Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  708–712
6. Formation of transition layers in heterostructures based on $Ga\,As-Al\,As$ solid-solutions during the liquid-phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986),  335–341
7. Nature of Minority Impurity States in Heavily Doped Crystals
   
   Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1660–1666
8. $0.677 \mu m$ – Continuous Injection InGaAsP/GaAsP DH Laser with Selective Limitation Produced by Liquid Epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1115–1118
9. Auger Profiles of Composition and Luminescent Studies of Liquid-Phase InGaAsP Heterostructures with Active Regions ${(1.5\div5)\cdot10^{-6}}$  cm
   
   Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1108–1114
10. Separate-confinement $Al\,Ga\,As/Ga\,As$ heterolasers obtained by the modified method of liquid epitaxy ($I_{\text{p}}=260$ A/cm$^{2}$, $\lambda= 0.86-0.83\,\mu m$, $T= 300$ K)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985),  1409–1413
11. Низкопороговые инжекционные InGaAsP/GaAs ДГС лазеры с раздельным ограничением, полученные методом жидкостной эпитаксии (${\lambda=0.78\div0.87}$ мкм, ${I_{\text{пор}}=460\,\text{А/см}^{2}}$, ${T=300}$ K)
    
    Fizika i Tekhnika Poluprovodnikov, 18:9 (1984),  1655–1659