Sinyavskii D V

Publications in Math-Net.Ru

1. PREPARATION OF Y-BA-CU-O HTSC-FILMS ON SI BY THE MOLECULAR-BEAM EPITAXY TECHNIQUE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:20 (1992),  85–89
2. Молекулярно-пучковая эпитаксия однодоменного арсенида галлия на (001) кремнии, пассивированном водородом
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:2 (1992),  1–5
3. DETERMINATION OF SUBSTRATE SURFACE-TEMPERATURE INSITU UNDER MBE OF GAAS(001) USING REFLECTED FAST ELECTRON-DIFFRACTION
   
   Zhurnal Tekhnicheskoi Fiziki, 61:1 (1991),  174–178
4. MOLECULAR-BEAM EPITATY (MBE) OF GAAS ON SI (001) SURFACE, SATURATED WITH HYDROGEN
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991),  19–23
5. STABILITY OF PROPERTIES (COMPOSITION, STRUCTURE) OF HYDROGEN-PASSIVATED SI(001) SURFACE DURING PREEPITAXIAL THERMAL-TREATMENT
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:19 (1990),  66–69
6. EVOLUTION OF THE (OO)-REFLEX OF THE RFED PICTURE AT THE INITIAL-STAGES OF GAAS(001) MBE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  41–46
7. DIFFUSION-MODEL OF THE EPITAXIAL-GROWTH OF ALXGA1-XAS SOLID-SOLUTIONS FROM LIMITED FUSION
   
   Zhurnal Tekhnicheskoi Fiziki, 58:2 (1988),  355–362
8. CURRENT CONTROL BY CROSS-SECTIONS OF THE THICKNESS AND CURRENT DEOXIDATION OF LAYERS OF ALGAAS CULTIVATED IN GROOVES
   
   Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  778–782
9. Low-threshold injection heterolasers with electric limits developed by the pulse laser effect
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:15 (1987),  913–918
10. INFLUENCE OF GROWING CONDITIONS ON PARAMETERS OF MULTIWAVE DHS-LASERS
    
    Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986),  1142–1149
11. Continuous single-mode injection $Ga\,Al\,As$ heterolasers, obtained by gasophase and liquid-phase epitaxial hybrid technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:10 (1986),  577–582
12. Formation of transition layers in heterostructures based on $Ga\,As-Al\,As$ solid-solutions during the liquid-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986),  335–341
13. MULTIWAVE LASER EMITTERS BASED ON ALXGA(1-X)AS SOLID-SOLUTIONS
    
    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  1962–1966
14. Separate-confinement $Al\,Ga\,As/Ga\,As$ heterolasers obtained by the modified method of liquid epitaxy ($I_{\text{p}}=260$ A/cm$^{2}$, $\lambda= 0.86-0.83\,\mu m$, $T= 300$ K)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985),  1409–1413
15. DIFFUSION SUBSTANCE TRANSFER IN CRYSTALLIZED MULTI-COMPONENT SOLUTION-FUSION
    
    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  2004–2010