Dmitriev Vladimir Andreevich

Publications in Math-Net.Ru

1. REVERSED MESA-STRUCTURE FROM SILICON-CARBIDE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992),  28–31
2. Высокотемпературный синий светодиод
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:3 (1992),  19–23
3. SIC-ALN SOLID-SOLUTIONS GROWN BY THE LIQUID EPITAXY ON SIC-6H SUBSTRATES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  50–53
4. LOCAL EPITAXY OF SILICON-CARBIDE FROM LIQUID-PHASE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  77–80
5. NITROGEN ALLOYING OF SILICON-CARBIDE BY CONTAINERLESS LIQUID EPITAXY TECHNIQUE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  43–46
6. NORMALLY CLOSED SIC (6H) FIELD TRANSISTOR WITH R-P-LOCK
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  1–5
7. GREEN SIC-6H-LIGHT EMITTING DIODES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990),  56–59
8. LIGHT-EMITTING-DIODES WITH LAMBDA-MAX-CONGRUENT-TO 398 NM
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  50–52
9. Фиолетовый SiC-$4C$-светодиод
   
   Fizika i Tekhnika Poluprovodnikov, 23:1 (1989),  39–43
10. CRYSTALLIZATION OF SILICON-CARBIDE MONOCRYSTAL LAYERS ON SILICON AT 1050-1250-DEGREES-C
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:12 (1989),  50–52
11. Синие SiC-$6H$-светодиоды
    
    Fizika i Tekhnika Poluprovodnikov, 22:4 (1988),  664–669
12. FILMS OF Y-BA-CU-O HTSC ON SEMICONDUCTOR (SIC) SUBLAYERS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1779–1781
13. HIGH-TEMPERATURE SIC-6H FIELD TRANSISTOR WITH THE P-N LOCKS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:4 (1988),  289–293
14. Formation of $Si\,C$ epitaxial R-P-structures of sublayers, obtained from volume $Si\,C$ crystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:19 (1987),  1168–1171
15. Dinistor on silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:16 (1987),  991–993
16. Current stringing in silicon-carbide R-P-transitions under the breakdown
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:12 (1987),  741–743
17. EPITAXIAL SILICON-CARBIDE LAYERS PRODUCED FROM SOLUTION-FUSION
    
    Zhurnal Tekhnicheskoi Fiziki, 56:1 (1986),  214–217
18. Tension limitations obtained by carbide-silicon R-P-structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986),  773–776
19. 3-color blue-green-red-indicator formed on monocrystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  541–543
20. Blue light-emitting-diodes based on silicon-carbide containerless liquid epitaxial-growth
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:7 (1986),  385–388
21. Tunnel-diode based on $Si\,C$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  976–978
22. Silicon-carbide light-emitting-diodes in the blueviolet spectrum area
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  246–248
23. Silicon-carbide R-P-structures produced by liquid epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  238–241