Ivanova N G

Publications in Math-Net.Ru

1. CRYSTALLIZATION OF SILICON-CARBIDE MONOCRYSTAL LAYERS ON SILICON AT 1050-1250-DEGREES-C
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:12 (1989),  50–52
2. EPITAXIAL SILICON-CARBIDE LAYERS PRODUCED FROM SOLUTION-FUSION
   
   Zhurnal Tekhnicheskoi Fiziki, 56:1 (1986),  214–217