Makarov V V

Publications in Math-Net.Ru

1. Некоторые эффекты, влияющие на профиль распределения внедренных ионов в кристаллических мишенях полупроводниковых соединений A$^{\text{III}}$B$^{\text{V}}$ после ионной имплантации
   
   Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  373–378
2. APPLICATION OF HIGH-RESOLUTION SPECTROSCOPY OF ELASTIC REFLECTION FOR STUDYING THE DIFFRACTION EFFECTS DURING INTERACTION OF FAST ELECTRONS WITH MONOCRYSTALS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991),  10–12
3. ELECTRONIC ANALOGS OF THE TECHNIQUE OF BACK SCATTERING OF FAST IONS FOR INVESTIGATION OF DEFECT DEPTH PROFILES IN MONOCRYSTALS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  30–33
4. Determination of chemical-composition of compounds on power spectra of fast electron elastic reflection
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987),  1043–1047
5. Effect of Surface Dissociation on the Properties of Ionically Implanted Silicon-Carbide $p$-Type Layers
   
   Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  170–172
6. Influence of non-centrisymmetric crystal-lattice on electron channeling
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:8 (1986),  501–505
7. Study of the Effect of Silicon-Carbide Ion Implantation and Annealing Modes on Crystal Structure and Resistance of $p$-Type Layers
   
   Fizika i Tekhnika Poluprovodnikov, 18:6 (1984),  1098–1100
8. Thermoelastic Stress in Silicon Annealed by Millisecond Pulses
   
   Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  747–750