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Publications in Math-Net.Ru
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Low-Threshold (${j_{\text{п}}=230\,\text{А/см}^{2}}$, ${T=300}$ K) AlGaAs Double-Heterostructure Lasers with Separate Limitation Produced by the Method of Liquid Epitaxy
Fizika i Tekhnika Poluprovodnikov, 20:2 (1986), 381–383
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Low-temperature liquid-phase epitaxy of $Al\,Ga\,As$-heterostructures with submicron ($10^{-1}-10^{-2}$-mu-m) layers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986), 533–537
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Photoluminescent Properties and Electron Structure of Anodic-Oxidized $n$-InP Surface
Fizika i Tekhnika Poluprovodnikov, 19:1 (1985), 110–113
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SOLAR PHOTOCELLS BASED ON INP AND GAXIN1-XASYP1-Y SOLID-SOLUTIONS
Zhurnal Tekhnicheskoi Fiziki, 54:4 (1984), 862–864
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ELEMENTS OF CASCADE SOLAR PHOTOTRANSFORMATIONS BASED ON INP-GAINPAS AND
INP-CDS HETEROSTRUCTURES
Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:1 (1984), 51–55
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CALCULATION OF CASCADE SOLAR ELEMENTS ON THE BASIS OF A3B5 COMPOUNDS
Zhurnal Tekhnicheskoi Fiziki, 53:10 (1983), 2025–2031
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STUDY OF COMPLEMENT P-N-P AND N-P-N CASCADE SOLAR ELEMENTS
Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983), 320–324
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Фотоэлементы на основе гетеропереходов в системе
Al$_{y}$Ga$_{1-y}$As$_{1-x}$Sb$_{x}$
Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:12 (1983), 734–737
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