Sulima O V

Publications in Math-Net.Ru

1. ALGAAS/GAAS HETEROSTRUCTURES OBTAINED ON SILICON BY LIQUID-PHASE EPITAXY METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:3 (1991),  1–3
2. Особенности поведения радиационных дефектов в структурах на основе Al$_{x}$Ga$_{1-x}$As/GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1320–1322
3. Влияние радиации на фотоэлектрические параметры AlGaAs${-}(p{-}n)$-гетероструктур
   
   Fizika i Tekhnika Poluprovodnikov, 22:8 (1988),  1391–1395
4. Low-temperature liquid-phase epitaxy of $Al\,Ga\,As$-heterostructures with submicron ($10^{-1}-10^{-2}$-mu-m) layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  533–537
5. EFFECT OF THE AL-GA-AS HETEROSTRUCTURE SURFACE ON ZN DIFFUSION FROM GASEOUS MEDIA
   
   Zhurnal Tekhnicheskoi Fiziki, 55:9 (1985),  1844–1846
6. TRANSITION LAYER EFFECT ON THE SPECTRAL DISTRIBUTION OF THE ALGAAS HETEROPHOTOELEMENT PHOTO-RESPONSE
   
   Zhurnal Tekhnicheskoi Fiziki, 55:6 (1985),  1124–1129
7. Study of Leakage Currents of Planar $p{-}n$ Junctions in InP and of $p{-}i{-}n$ Structures Based on InGaAs/InP
   
   Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  668–673
8. Thermostable concentrator solar-cells based on $Al\,Ga\,As$-heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:14 (1985),  853–857
9. STUDY OF ZINC DIFFUSION FROM GAS PHASES IN ALXGA1-XAS SOLID-SOLUTIONS
   
   Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1320–1324
10. SOLAR PHOTOCELLS BASED ON INP AND GAXIN1-XASYP1-Y SOLID-SOLUTIONS
    
    Zhurnal Tekhnicheskoi Fiziki, 54:4 (1984),  862–864
11. Инжекционные РО InGaAsP/InP ДГС лазеры с порогом $300\,\text{А/см}^{2}$ (четырехсколотые образцы, ${\lambda=1.25}$ мкм, ${T=300}$ K)
    
    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2057–2060
12. Фотоэлектролюминесценция в AlGaAs-гетероструктуpax
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983),  1058–1061