Andreev Alexandr Andreevich

Publications in Math-Net.Ru

1. MECHANIC CHARACTERISTICS OF THE INTERACTION OF LASER-EMISSION OF DIFFERENT WAVE-LENGTH WITH NONTRANSPARENT MATERIALS
   
   Zhurnal Tekhnicheskoi Fiziki, 62:2 (1992),  84–92
2. Remagnetization dynamics of amorphous $\mathrm{Tb}$–$\mathrm{Fe}$ films with perpendicular anisotropy
   
   Fizika Tverdogo Tela, 33:5 (1991),  1350–1354
3. Получение аморфных гидрогенизированных широкозонных полупроводников $a$-Si$_{1-x}$C$_{x}$ : H в реакторе с вынесенной подложкой
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:16 (1991),  46–49
4. Superconducting properties of a new telluride glass in the $\mathrm{Si}$–$\mathrm{Ag}$–$\mathrm{Te}$ system at high pressures
   
   Fizika Tverdogo Tela, 30:7 (1988),  2177–2181
5. Электрофизические свойства контактов с барьером Шоттки на аморфном гидрированном кремнии
   
   Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  461–464
6. Characteristic Properties of Low-Temperature Photoluminescence of $a$-Si : H
   
   Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  1939–1943
7. CONVECTIVE ACCELERATION OF WAVE BEAMS IN THE HETEROGENEOUS PLASMA
   
   Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986),  1190–1193
8. ANOMALY OF ION-PHOTON AND SECONDARY ION NICKEL EMISSION NEAR CURIE-POINT
   
   Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986),  419–421
9. Refinement of the Constant-Photocurrent Method for the Determination of Localized-State Density in $a$-Si : H
   
   Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2106–2108
10. Electric Conductivity and Structure of Amorphous-Silicon Layers
    
    Fizika i Tekhnika Poluprovodnikov, 20:8 (1986),  1469–1475
11. Temperature Quenching of Photolumiuescence in Amorphous Hydrogeuated Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1292–1297
12. Acoustoelectron interactions in the $Li\,Nb\,O_3-a-Si:H$ layered structure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:20 (1985),  1248–1251
13. Production and investigation of thin-film wave-guide photodiodes with the Schottky-barrier based on amorphous silica
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:13 (1985),  813–816
14. Influence of the temperature anneal on characteristics of solar elements with Schottky-barrier based on the amorphous hydrogenated silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985),  28–31
15. Туннельная рекомбинация в $a$-Si$\langle$H$\rangle$ в области « высоких» температур $300{-}500$ K
    
    Fizika i Tekhnika Poluprovodnikov, 18:9 (1984),  1647–1650
16. On the Nature of Dark Currents in the Structures with Schottky Barriers Hydrogenated Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  373–376
17. POSSIBILITY OF WAVEFRONT REVERSAL DURING MANDELSTAM-BRILLOUIN FORCED SCATTERING IN PLASMA
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984),  883–888
18. DETERMINATION OF THE DENSITY OF STATES IN FORBIDDEN BANDS OF AMORPHOUS HYDROGENATED SILICON
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:9 (1984),  529–532
19. Electron exchange between ionized and neutral iron centers in amorphous $\mathrm{GeSe}$ doped with iron
    
    Fizika Tverdogo Tela, 25:5 (1983),  1528–1530
20. Новый тип переноса электронов в аморфном кремнии
    
    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  2072–2075
21. Электрические свойства аморфных пленок сплавов кремний–германий
    
    Fizika i Tekhnika Poluprovodnikov, 17:10 (1983),  1871–1873
22. Особенности спектральной чувствительности барьеров Шоттки на гидрированном аморфном кремнии
    
    Fizika i Tekhnika Poluprovodnikov, 17:10 (1983),  1869–1871
23. О механизме проводимости аморфного кремния при гидрировании
    
    Fizika i Tekhnika Poluprovodnikov, 17:7 (1983),  1255–1258
24. Самофокусировка лазерного излучения в неоднородной, движущейся плазме
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:16 (1983),  1018–1022