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			Publications in Math-Net.Ru
			
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				Determination of 2DEG parameters in LED heterostructures with three quantum wells In$_x$Ga$_{1-x}$N/GaN by terahertz time-domain spectroscopy (THz-TDs)
 
 Fizika Tverdogo Tela, 65:2 (2023),  185–194
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				Investigation of the parameters of a two-dimensional electron gas in InGaN/GaN quantum wells by the method of terahertz plasmon resonance
 
 Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1059–1067
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				Investigation into the internal electric-field strength in the active region of InGaN/GaN-based LED structures with various numbers of quantum wells by electrotransmission spectroscopy
 
 Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  420–425
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				Photoreversible current in InGaN/GaN-based LED heterostructures with different numbers of QWs
 
 Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  292–295
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				Investigation into the distribution of built-in electric fields in LED heterostructures with multiple GaN/InGaN quantum wells by electroreflectance spectroscopy
 
 Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  493–499
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				Photoreflectance spectroscopy study of LT-GaAs layers grown on Si and GaAs substrates
 
 Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  708–711
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				Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a $p$–$n$ junction
 
 Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  198–201
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				Raman scattering in InP doped by Be$^+$-ion implantation
 
 Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  177–181
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				Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy
 
 Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1238–1242
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				Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths
 
 Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1215–1220
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				Raman scattering in laser-crystallized silicon
 
 Fizika Tverdogo Tela, 34:11 (1992),  3334–3338
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				Raman scattering in various phases of ion-implanted, laser-annealed silicon
 
 Fizika Tverdogo Tela, 32:5 (1990),  1507–1510
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				Определение концентрации марганца в твердых
растворах Hg$_{1-x}$Mn$_{x}$Te методом электроотражения
 
 Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  193–196
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				Difference raman spectroscopy in $\gamma$-irradiated and neutron-irradiated $\alpha$-quartz
 
 Fizika Tverdogo Tela, 29:8 (1987),  2468–2470
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				OPTIMIZATION OF PARAMETERS OF PIEZOCERAMIC MIRRORS OF ADAPTIVE OPTICS
 
 Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987),  1209–1210
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				Anisotropy of acoustic anomalies at phase transition in lead germanate on hypersound frequencies
 
 Fizika Tverdogo Tela, 28:3 (1986),  749–753
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				Temperature dependence of $\mathrm{BiVO}_{4}$ domain structure
 
 Fizika Tverdogo Tela, 27:1 (1985),  231–233
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				Temperature dependence of $\mathrm{BiVO}_{4}$ refraction index
 
 Fizika Tverdogo Tela, 25:9 (1983),  2782–2784
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				Soft acoustic mode study in $\mathrm{BiVO}_{4}$ ferroelastic
 
 Fizika Tverdogo Tela, 25:6 (1983),  1910–1912
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				Photoelasticity of $\mathrm{KH}_{2}\mathrm{PO}_{4},\mathrm{KD}_{2}\mathrm{PO}_{4}$ and $\mathrm{RbH}_{2}\mathrm{PO}_{4}$
 
 Fizika Tverdogo Tela, 25:2 (1983),  580–582
 
				
	
	
	
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