Matveev Boris Anatol'evich

Publications in Math-Net.Ru

1. On the use of indium arsenide as the waveguide material in the measurements by attenuated total reflectance
   
   Optics and Spectroscopy, 129:9 (2021),  1193–1197
2. Localization of current flow in thermophotovoltaic converters based on InAsSbP/InAs double heterostructures
   
   Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020),  835–840
3. Comparative characteristic analysis of thermophotovoltaic $p$-InAsSbP/$n$-InAs converters irradiated on $p$- and $n$-sides
   
   Zhurnal Tekhnicheskoi Fiziki, 89:8 (2019),  1233–1237
4. Mid-IR leds based on A$^{3}$B$^{5}$ heterostructures for gas analyzers. Capabilities and applications 2014–2018
   
   Optics and Spectroscopy, 127:2 (2019),  300–305
5. Indium arsenide-based spontaneous emission sources (review: a decade later)
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  147–157
6. InAsSb diode optical pairs for real-time carbon dioxide sensors
   
   Zhurnal Tekhnicheskoi Fiziki, 88:9 (2018),  1433–1438
7. InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths
   
   Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  234–237
8. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  269–275
9. Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  657–662
10. Природа температурной зависимости пороговой плотности тока длинноволновых лазеров на основе ДГС InAsSbP/InAs и InAsSbP/InAsSb
    
    Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  246–256
11. Поляризация фотолюминесценции с поверхности гетероструктуры A$^{\text{III}}$B$^{\text{V}}$ с профилированной подложкой
    
    Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  12–16
12. INASSBP-BASED LIGHT DIODES USED IN SMALL-SCALE ANALYZERS OF CARBON OXIDE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:23 (1991),  75–79
13. Structural perfection of $\mathrm{InAs}_{1-x-y}\mathrm{Sb}_{x}\mathrm{P}_{y}$–$\mathrm{InAs}$ double heterostructures
    
    Fizika Tverdogo Tela, 32:11 (1990),  3355–3361
14. ABSORPTION-EDGE OF VARISON EPITAXIAL LAYERS OF INAS1-XSBX WHERE (X-LESS-THAN-0,54)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  76–80
15. LOW-THRESHOLD LASERS OF 3-3,5 MU-M BASED ON DHS INASSBP/IN1-XGAXAS1-YSBY
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989),  49–52
16. Катодолюминесценция градиентных эпитаксиальных структур InAsSbP/InAs
    
    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1244–1247
17. A PROFILE OF THE DEFORMATION IN GRADIENT STRUCTURES OF INAS1-X-YSBXY/INAS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:22 (1988),  2044–2048
18. STIMULATED EMISSION (3-3.3 MU-M, 77-K) UNDER THE CURRENT INJECTION IN PLASTICALLY DEFORMED DHS INASSBP/INAS LASERS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1617–1621
19. REDISTRIBUTION OF AFTER-PRESSURE DURING SUBLAYER PROFILING IN INGASBAS/GASB STRUCTURES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  247–250
20. MANIFESTATION OF BOUNDARY DISTORTIONS ON X-RAY TOPOGRAMS OF GAASSBP-GAAS CURVED STRUCTURES
    
    Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987),  2000–2004
21. Photoluminescence of Plastically Deformed $p$-Type GaSb
    
    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1914–1915
22. Luminescent Properties of Epitaxial Layers and $p{-}n$ Structures Based on In$_{1-x}$Ga$_{x}$As (${0 < x < 0.23}$)
    
    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1079–1084
23. Injection coherent emission in $In\,As\,Sb\,P/In\,As/In\,As\,Sb\,P$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  563–565
24. Temperature-dependence of parameters of stimulated radiation in R-P structures based on $In\,As_{1-x}\,Sb_{x}$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  329–331
25. Dislocation distribution in bended $\mathrm{InAsSbP}/\mathrm{InAs}$ structures
    
    Fizika Tverdogo Tela, 28:3 (1986),  789–792
26. Coherent irradiation of 3,9-mu-m in R-P structures based on $Jn\,As\,Sb\,P$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986),  1444–1447
27. Peculiarities of Luminescence of Plastically Deformed InAsSbP/InAs Heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 19:11 (1985),  2031–2035
28. Concave diffraction lattices on the monocrystal surface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1172–1175
29. Поляризация люминесценции эпитаксиальных слоев твердых растворов InAs$_{1-x-y}$Sb$_{x}$P$_{y}$
    
    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1795–1798
30. X-RAY-DIFFRACTION ON THE PLASTIC DEFORMED EPITAXIAL HETEROSTRUCTURES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1297–1301
31. Длинноволновые неохлаждаемые светодиоды на основе твердых растворов InAs$_{1-x-y}$Sb$_{x}$P$_{y}$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983),  391–395