Popova Tat'yana Borisovna

Publications in Math-Net.Ru

1. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
2. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
3. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
4. Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
   
   Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  56–62
5. Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1726
6. Obtaining of crystals of polyelemental solid solutions of rare earth hexaborides
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016),  3–8
7. Study of the solid solutions in the $\mathrm{CdTe}$–$\mathrm{MnTe}$–$\mathrm{MgTe}$ system
   
   Fizika Tverdogo Tela, 34:7 (1992),  2284–2286
8. Электрические и фотоэлектрические свойства твердых растворов InAsSbP
   
   Fizika i Tekhnika Poluprovodnikov, 25:9 (1991),  1639–1645
9. REMOTE FIELDS OF RADIATION OF HETEROLASERS WITH A GRADIENT WAVE-GUIDE
   
   Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  747–754
10. Concentration Shift of Gap Width of ZnSe$_{1-x}$Te$_{x}$ (${0\leqslant x\leqslant1}$) Solid Solution
    
    Fizika i Tekhnika Poluprovodnikov, 21:2 (1987),  350–353
11. Concentration dependence of the gap width of $\mathrm{Zn}_{x}\mathrm{Cd}_{1-x}\mathrm{Se}$ semiconducting solid solutions with different crystal structures
    
    Fizika Tverdogo Tela, 28:12 (1986),  3743–3745
12. Luminescence spectra of the superionic conductor $\mathrm{Na}_{5}\mathrm{TbSi}_{4}\mathrm{O}_{12}$
    
    Fizika Tverdogo Tela, 28:6 (1986),  1944–1946
13. Dislocation distribution in bended $\mathrm{InAsSbP}/\mathrm{InAs}$ structures
    
    Fizika Tverdogo Tela, 28:3 (1986),  789–792