Talalakin Georgy Nikolaevich

Publications in Math-Net.Ru

1. Природа температурной зависимости пороговой плотности тока длинноволновых лазеров на основе ДГС InAsSbP/InAs и InAsSbP/InAsSb
   
   Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  246–256
2. Поляризация фотолюминесценции с поверхности гетероструктуры A$^{\text{III}}$B$^{\text{V}}$ с профилированной подложкой
   
   Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  12–16
3. INASSBP-BASED LIGHT DIODES USED IN SMALL-SCALE ANALYZERS OF CARBON OXIDE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:23 (1991),  75–79
4. Structural perfection of $\mathrm{InAs}_{1-x-y}\mathrm{Sb}_{x}\mathrm{P}_{y}$–$\mathrm{InAs}$ double heterostructures
   
   Fizika Tverdogo Tela, 32:11 (1990),  3355–3361
5. ABSORPTION-EDGE OF VARISON EPITAXIAL LAYERS OF INAS1-XSBX WHERE (X-LESS-THAN-0,54)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  76–80
6. LOW-THRESHOLD LASERS OF 3-3,5 MU-M BASED ON DHS INASSBP/IN1-XGAXAS1-YSBY
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989),  49–52
7. Катодолюминесценция градиентных эпитаксиальных структур InAsSbP/InAs
   
   Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1244–1247
8. О механизмах рекомбинации носителей тока в $p$-InAs$_{1-x-y}$Sb$_{x}$P$_{y}$
   
   Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  789–792
9. A PROFILE OF THE DEFORMATION IN GRADIENT STRUCTURES OF INAS1-X-YSBXY/INAS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:22 (1988),  2044–2048
10. STIMULATED EMISSION (3-3.3 MU-M, 77-K) UNDER THE CURRENT INJECTION IN PLASTICALLY DEFORMED DHS INASSBP/INAS LASERS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1617–1621
11. REDISTRIBUTION OF AFTER-PRESSURE DURING SUBLAYER PROFILING IN INGASBAS/GASB STRUCTURES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  247–250
12. MANIFESTATION OF BOUNDARY DISTORTIONS ON X-RAY TOPOGRAMS OF GAASSBP-GAAS CURVED STRUCTURES
    
    Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987),  2000–2004
13. Photoluminescence of Plastically Deformed $p$-Type GaSb
    
    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1914–1915
14. Luminescent Properties of Epitaxial Layers and $p{-}n$ Structures Based on In$_{1-x}$Ga$_{x}$As (${0 < x < 0.23}$)
    
    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1079–1084
15. Injection coherent emission in $In\,As\,Sb\,P/In\,As/In\,As\,Sb\,P$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  563–565
16. Temperature-dependence of parameters of stimulated radiation in R-P structures based on $In\,As_{1-x}\,Sb_{x}$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  329–331
17. Dislocation distribution in bended $\mathrm{InAsSbP}/\mathrm{InAs}$ structures
    
    Fizika Tverdogo Tela, 28:3 (1986),  789–792
18. On the Electrophysical and Photoelectrical Properties of InAs$_{1-x-y}$Sb$_{x}$P$_{y}$Based Eреtaxial Diode Structures
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2195–2198
19. On the Lifetimes of Charge Carriers in Zn- and Mn-Doped In$_{1-x}$Ga$_{x}$As Solid Solutions
    
    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  537–538
20. Coherent irradiation of 3,9-mu-m in R-P structures based on $Jn\,As\,Sb\,P$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986),  1444–1447
21. Peculiarities of Luminescence of Plastically Deformed InAsSbP/InAs Heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 19:11 (1985),  2031–2035
22. Concave diffraction lattices on the monocrystal surface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1172–1175
23. Поляризация люминесценции эпитаксиальных слоев твердых растворов InAs$_{1-x-y}$Sb$_{x}$P$_{y}$
    
    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1795–1798
24. X-RAY-DIFFRACTION ON THE PLASTIC DEFORMED EPITAXIAL HETEROSTRUCTURES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1297–1301
25. Длинноволновые неохлаждаемые светодиоды на основе твердых растворов InAs$_{1-x-y}$Sb$_{x}$P$_{y}$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983),  391–395