Grigor'ev B I

Publications in Math-Net.Ru

1. CURRENT SHUTOFF OF THE CONTROL OF PHOTON-INJECTION PULSE THYRISTORS BASED ON HETEROSTRUCTURE
   
   Zhurnal Tekhnicheskoi Fiziki, 59:2 (1989),  156–158
2. Расчет основных характеристик фотонно-инжекционного импульсного тиристора на основе гетероструктуры
   
   Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  413–418
3. HIGH-SPEED RESPONSE DURING SWITCHING ON THE BIPOLAR HETEROTRANSISTOR WITH VARIABLE COLLECTORS
   
   Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987),  1157–1160
4. Saturation Voltage and Current Gain of $N^{+}{-}N{-}P{-}N^{+}$ Heterotransistors with Variband Collector
   
   Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  134–139
5. Study of P-N-structures and P-N-P-N-structures based on nonalloyed gallium-phosphide layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987),  1270–1274
6. THEORY OF STATIONARY SATURATION REGIMES IN POWER HIGH-VOLTAGE COMPONENT TRANSISTORS
   
   Zhurnal Tekhnicheskoi Fiziki, 56:3 (1986),  547–551
7. On the Determination of Excess Charge Carrier Lifetime in Lightly Doped $p-$ and $n$-Regions of Photon-Injection Transistors and Thyristors
   
   Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1897–1900
8. Transients Processes in High-Voltage Photon-Injection Transistors Based on Heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  677–682
9. High-Voltage Photon-Injection Transistor Based on a Heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  878–884
10. Study of Injection Efficiency of $p{-}n$ Junctions Based on Lightly Doped GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  167–169
11. Время жизни неравновесных носителей заряда в слабо легированных эпитаксиальных слоях GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  1953–1956