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Publications in Math-Net.Ru
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Исследование температурной зависимости пороговой плотности тока ДГС
лазеров на основе GaInAsSb
Fizika i Tekhnika Poluprovodnikov, 25:3 (1991), 394–401
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Поведение примесей в твердых растворах $p$-GaInSbAs
Fizika i Tekhnika Poluprovodnikov, 25:2 (1991), 283–286
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EMISSION STABILIZATION UNDER THE GROWN INGAASSB-GASB HETEROLASE
(LAMBDA=2-MU-M) OPERATION
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991), 56–60
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Кластерные образования в эпитаксиальных слоях твердых растворов
$p$-GaInSbAs, выращенных на подложках $n$-GaSb : Te
Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1072–1078
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Электрические и фотоэлектрические свойства твердых растворов
$p$-GaInSbAs
Fizika i Tekhnika Poluprovodnikov, 24:1 (1990), 98–103
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HIGH-PRECISION METHOD OF COMPUTATION OF FUSION-SOLIDS PHASE-EQUILIBRIA
IN A3B5 SYSTEMS (BASED ON IN-GA-AS-SB)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:12 (1989), 67–73
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COHERENT EMISSION-SPECTRA OF GAINASSB BAND LASERS
Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988), 1623–1626
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LONG-WAVE LASERS BASED ON GAINASSB SOLID-SOLUTIONS NEAR THE
IMMISCIBILITY BOUNDARY(LAMBDA-APPROXIMATELY-2.5 MU-M, T=300-K)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:20 (1988), 1839–1843
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EMISSION GENERATION IN THE CHANNELED OVERGROWN LASER BASED ON
GAINASSB/GASB IN CONTINUOUS REGIME (T=20-DEGREES-C, LAMBDA=2.0-MU-M)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988), 1671–1675
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DEFECT FORMATION IN GAALSB/GASB STRUCTURES FOR PHOTODIODES
Zhurnal Tekhnicheskoi Fiziki, 57:2 (1987), 316–321
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Effect of a resonator length on electroluminescent characteristics of $Ga\,In\,As\,Sb$-based lasers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 517–523
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Manifestation of self-correlated quantum-dimensional potential holes in electroluminescent properties of $Ga\,In\,As\,Sb$ based lasers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987), 459–464
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Generation of Coherent Radiation in Quantum-Dimensional Structure on the Single Heterojunction
Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2217–2221
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Quantum-dimensional laser with single heterojunction
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986), 664–668
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Injection ($Ga\,Al\,As\,Sb/Ga\,Sb/Ga\,In\,As\,Sb$) heterolaser with $2^x$-channel wave-guide-(DHS 2KV $\lambda=2$-mu-m), operating at room-temperature
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986), 557–561
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