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Publications in Math-Net.Ru
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Synthesis of heterogeneous ZnO/Co$_{3}$O$_{4}$ nanostructures by chemical deposition from solutions
Zhurnal Tekhnicheskoi Fiziki, 90:7 (2020), 1184–1188
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Aerosol synthesis of highly dispersed Y$_{3}$Al$_{5}$O$_{12}$ : Ce$^{3+}$ phosphor with intense photoluminescence
Fizika Tverdogo Tela, 61:10 (2019), 1884–1889
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Preparation of nanosized tungsten and tungsten oxide powders
Fizika Tverdogo Tela, 61:1 (2019), 163–168
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Flexible electrode made of graphene and few-layer graphite
Zhurnal Tekhnicheskoi Fiziki, 88:7 (2018), 1116–1118
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Effect of heat and plasma treatments on the photoluminescence of zinc-oxide films
Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 189–195
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The influence of ultraviolet exposure and humidity on the photoluminescence spectra of zinc oxide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 80–87
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Fabrication of nanostructured silicon surface using selective chemical etching
Zhurnal Tekhnicheskoi Fiziki, 87:11 (2017), 1673–1676
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Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma
Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1030–1035
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Metastable and bistable defects in silicon
UFN, 170:2 (2000), 143–155
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К вопросу о повышении разрешающей способности метода нестационарной
емкостной спектроскопии глубоких уровней
Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 751–753
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Исследование рекомбинационно-ускоренного отжига радиационных дефектов
в кремнии
Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 684–688
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THE ELECTRON-STRUCTURE AND PROPERTIES OF NATURAL INTERSTITIAL ATOMS IN
SILICON
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:18 (1991), 71–74
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Пассивация примесей и радиационных дефектов водородом в кремнии
$p$-типа
Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1020–1024
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Free carrier scattering near phase transitions in $\mathrm{PbTe}_{1-x}\mathrm{S}_{x}$ solid solutions
Fizika Tverdogo Tela, 28:4 (1986), 1020–1025
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On the Mechanisms of Electron Scattering in Lead Chalcogenides
Fizika i Tekhnika Poluprovodnikov, 20:8 (1986), 1423–1427
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Impurity Photoconduction in Indium-Doped Pb$_{1-x-y}$Ge$_{x}$Sn$_{y}$Te Solid Solution
Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1725–1730
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Study of Electric Properties of Indium-Doped Pb$_{1-x}$Ge$_{x}$Te in the Region of Phase Transition
Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 624–627
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Defect and impurity effects on charge carrier scattering near the phase transition in semiconductor–ferroelectric $\mathrm{Pb}_{1-x}\mathrm{Ge}_{x}\mathrm{Te}$
Fizika Tverdogo Tela, 25:12 (1983), 3571–3576
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