Publications in Math-Net.Ru
-
MOLECULAR-BEAM EPITAXY (MBE) OF GAAS AND (AL,GA)AS ON UNORIENTED
GAAS(100) SUBSTRATES
Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:11 (1992), 72–76
-
Квантово-размерные AlGaAs/GaAs-гетероструктуры со
100%-м квантовым
выходом излучательной рекомбинации, полученные методом молекулярно-пучковой
эпитаксии
Fizika i Tekhnika Poluprovodnikov, 22:12 (1988), 2105–2110
-
POWER CONTINUOUS INGAASP/GAAS HETEROLASER WITH THE DIELECTRIC MIRROR
(IPOR=100A/CM2,D=1.1WATT,EFFICIENCY=66-PERCENT,T=10-DEGREES-C
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 699–702
-
Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å
Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 178–181
-
Continuous intrastrip $In\,Ga\,As\,P/In\,P$ SL DH-lasers with $\lambda=1.3$-mu-m – reduction of thresholds and the capacity increase
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986), 660–663
© , 2024