Strel'chuk A M

Publications in Math-Net.Ru

1. Development of the processing technique and study of microwave switches based on 4$H$-SiC $p$–$i$–$n$ diodes
   
   Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  264–267
2. Structural, electrical, and optical properties of 4$H$-SiC for ultraviolet photodetectors
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1368–1373
3. Characteristics of Schottky rectifier diodes based on silicon carbide at elevated temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1364–1367
4. Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  35–37
5. Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1604–1608
6. Radiation-induced damage of silicon-carbide diodes by high-energy particles
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1651–1655
7. Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  311–316
8. A study of the effect of electron and proton irradiation on 4$H$-SiC device structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017),  63–67
9. Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  250–253
10. Высокотемпературный диод Шоттки Au$-$SiC-$6H$
    
    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  328–333
11. Связь желтой электролюминесценции в $6H$-SiC с глубокими центрами
    
    Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1384–1390
12. Электрические характеристики и температурный коэффициент напряжения пробоя микроплазм в низковольтных карбид-кремниевых $p{-}n$-структурах
    
    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  647–652
13. Разновидность неклассического термоинжекционного тока в карбид-кремниевых $p{-}n$-структурах
    
    Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1813–1818
14. Неклассический термоинжекционный ток в карбид-кремниевых $p{-}n$-структурах
    
    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  647–651
15. Температурная зависимость напряжения лавинного пробоя в карбид-кремниевых $p{-}n$-переходах
    
    Fizika i Tekhnika Poluprovodnikov, 22:9 (1988),  1574–1579
16. Электрические характеристики эпитаксиальных $p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$
    
    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  298–300
17. Formation of $Si\,C$ epitaxial R-P-structures of sublayers, obtained from volume $Si\,C$ crystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:19 (1987),  1168–1171
18. Structures with Ionically Implanted p${-}$n Junction Based on Epitaxial $4H$-SiC with $S$-Like Current–Voltage Characteristic
    
    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1654–1657
19. Study of Current-Voltage Characteristics of Diode Structures Based on Silicon Carbide
    
    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  844–848
20. Tension limitations obtained by carbide-silicon R-P-structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986),  773–776
21. Tunnel-diode based on $Si\,C$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  976–978
22. Silicon-carbide R-P-structures produced by liquid epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  238–241