Vul' Svetlana Petrovna

Publications in Math-Net.Ru

1. Etching of wrinkled graphene oxide films in noble gas atmosphere under UV irradiation
   
   Nanosystems: Physics, Chemistry, Mathematics, 7:1 (2016),  81–86
2. Utilizing of the Medium-Energy Ion Scattering spectrometry for the composition investigation of graphene oxide films on silicon surface
   
   Nanosystems: Physics, Chemistry, Mathematics, 5:1 (2014),  113–116
3. Полевой транзистор с $p{-}n$-переходом в качестве затвора на основе твердых растворов GaAs$_{1-x-y}$Sb$_{x}$P$_{y}$
   
   Fizika i Tekhnika Poluprovodnikov, 25:10 (1991),  1718–1720
4. EFFECT OF HYDROGEN FLOW ON PARAMETERS OF GAAS-LAYERS GROWN BY THE LIQUID-PHASE EPITAXY TECHNIQUE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:13 (1991),  76–81
5. Drift Barriers in Epitaxial Layers of GaAs$_{1-x-y}$Sb$_{x}$P$_{y}$ Pure Solid Solutions
   
   Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  662–665
6. Correlated Distribution of Impurities in Undoped Epitaxial Layers of GaAs$_{1-x-y}$Sb$_{x}$P$_{y}$ Solid Solutions
   
   Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1227–1233
7. Direct observations of high-ohmic areas in epitaxial layers of $Ga\,As_{1-x-y}\,Sb_{x}\,P_{y}$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:15 (1986),  912–916
8. High-selective photoresistor based on solid-solutions in the $Ga\,As-Ga\,Sb$ system
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985),  717–720
9. Highly-efficient large area phototransistor fast-resposing on the wave length in the $0.9$–$1.1\,\mu m$ range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985),  7–11
10. О зависимости ширины запрещенной зоны нелегированного твердого раствора Al$_{x}$Ga$_{1-x}$Sb от состава (${0\leqslant x\leqslant1}$) и температуры (${4.2\leqslant T\leqslant200}$ K)
    
    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  103–107