Vainshtein S N

Publications in Math-Net.Ru

1. Исследование субнаносекундного включения арсенид-галлиевых тиристорных структур
   
   Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1134–1137
2. VISUALIZATION OF THE SUBNANOSECOND SWITCHING OF ARSENIDE-GALLIUM-DIODE STRUCTURES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:16 (1988),  1526–1530
3. HIGH-VOLTAGE ARSENIDE-GALLIUM FORCE DIODES OF LARGE SQUARE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988),  1153–1156
4. NEGATIVE TEMPERATURE-COEFFICIENT OF BREAKDOWN PRESSURE IN SILICON-CARBIDE R-P TRANSITIONS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:6 (1988),  545–547
5. Propagation of Switched State in Gallium-Arsenide Thyristors
   
   Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  129–133
6. Dinistor on silicon-carbide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:16 (1987),  991–993
7. Current stringing in silicon-carbide R-P-transitions under the breakdown
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:12 (1987),  741–743
8. Light quenching of the $1/f$ noise in gallium-arsenide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987),  645–648
9. COMPARATIVE INVESTIGATION OF THE SWITCHING ON PROCESSES OF GALLIUM-ARSENIDE AND SILICON THYRISTORS
   
   Zhurnal Tekhnicheskoi Fiziki, 56:7 (1986),  1343–1347
10. Subnanosecond connection of arsenide-gallium thyristors
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:15 (1986),  925–928
11. SWITCHED ON STATE PROPAGATION IN GAAS THYRISTORS OF THE LARGE AREA
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:23 (1984),  1430–1433
12. HIGH-POWER, HIGH-SPEED COMMUTATORS BASED ON GAAS DINISTOR STRUCTURES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984),  385–388
13. MAIN PARAMETERS OF SWITCHING-ON OF ARSENIDE-GALLIUM THYRISTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 53:3 (1983),  573–575
14. Распространение включенного состояния в арсенидгаллиевых тиристорах
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:9 (1983),  546–549