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Korablev Vadim Vasilyvich

Publications in Math-Net.Ru

  1. Study of short-range order parameters in amorphous films based on the extended fine structure in total secondary electron yield spectra

    Fizika Tverdogo Tela, 34:3 (1992),  979–981
  2. Методика и результаты исследования кинетики поверхностной ЭДС в GaAs

    Fizika i Tekhnika Poluprovodnikov, 23:2 (1989),  323–327
  3. Angular-resolved spectroscopy of authentic secondary electrons on low work function tungsten

    Fizika Tverdogo Tela, 30:7 (1988),  2112–2117
  4. Effect of adsorbate structure on the manifestation of the substrate electronic structure in angularly resolved low-energy secondary electron spectra

    Fizika Tverdogo Tela, 30:4 (1988),  1038–1042
  5. Secondary electron threshold workfunction spectrum of barium titanate

    Fizika Tverdogo Tela, 30:1 (1988),  286–288
  6. Interrelationship between two different approaches to the description of secondary emission from single crystals

    Fizika Tverdogo Tela, 29:5 (1987),  1602–1604
  7. Theoretical and experimental spectra of slow secondary electrons emitted at different angles to $(100)$ W

    Fizika Tverdogo Tela, 29:3 (1987),  702–705
  8. Determination of the Rate of Semiconductor Surface Recombination by Electron Excitation

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  911–915
  9. Manifestation of the band structure in the angle-resolved secondary electron spectra

    Fizika Tverdogo Tela, 28:9 (1986),  2648–2654
  10. Orientation effects in the electron interaction with single crystals in soft X-ray excitation potential spectroscopy

    Fizika Tverdogo Tela, 28:7 (1986),  2196–2198
  11. Determination of the electron mean free path in solids using soft-X-ray excitation potential spectroscopy

    Fizika Tverdogo Tela, 28:6 (1986),  1928–1931
  12. The slow secondary electron distribution function in a semiconductor under electronic excitation

    Fizika Tverdogo Tela, 28:5 (1986),  1569–1571
  13. ELECTRON-IRRADIATION EFFECT ON THE POTENTIAL OF A SEMICONDUCTOR SURFACE

    Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986),  2231–2233
  14. Effect of the Properties of Semiconductor Space-Charge Region on the Electron Secondary Emission

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  603–606
  15. On the fine structure formation on the angle dependences of excitation potential spectra of single-crystalline soft-X-ray radiation

    Fizika Tverdogo Tela, 27:9 (1985),  2834–2835
  16. Primary electron incidence angle effect on amplitude of auger-peaks and its satellites in single crystals

    Fizika Tverdogo Tela, 27:8 (1985),  2533–2535
  17. Influence of electron incidence angle on excitation potential spectra of soft X-ray radiation of $\mathrm{V}(100)$ single crystals

    Fizika Tverdogo Tela, 26:7 (1984),  2198–2200
  18. MODELS FOR THE PROBLEM OF PROBING POTENTIAL RELIEF BY AN ELECTRON-BEAM

    Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984),  1198–1201
  19. Orientational effect at different energy Auger-electron emission from single crystals

    Fizika Tverdogo Tela, 25:12 (1983),  3527–3531
  20. Angular dependencies of the soft-X-ray appearance potential spectroscopy of single crystals

    Fizika Tverdogo Tela, 25:3 (1983),  647–652
  21. Secondary-emission methods of investigating the structure and composition of the surface layers of solids

    UFN, 122:3 (1977),  528–529


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