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Rumancev Valery Dmitrievich

Publications in Math-Net.Ru

  1. On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (-197 $\le T\le$ +85$^\circ$C)

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1374–1379
  2. Полосковые зарощенные AlGaAs-гетеролазеры, полученные методом жидкофазной эпитаксии в одностадийном процессе

    Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1666–1668
  3. Бесконтактное измерение электрических и фотоэлектрических параметров гетероструктур с $p{-}n$-переходом в люминесцирующем материале

    Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  143–150
  4. LOW-THRESHOLD (IN=2.0MA, 300-K) HIGH-PERFORMANCE (ETA-EXT=68-PERCENT) ALGAAS-HETEROLASERS OBTAINED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY TECHNIQUE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:5 (1991),  1–5
  5. Низкопороговые квантово-размерные AlGaAs-гетеролазеры для диапазона длин волн 730$-$850 нм, полученные методом низкотемпературной ЖФЭ

    Fizika i Tekhnika Poluprovodnikov, 24:10 (1990),  1757–1761
  6. PHOTOTRANSDUCERS BASED ON ALGAAS-GAAS HETEROSTRUCTURES FOR SCINTILLATION DETECTORS OF IONIZING-RADIATIONS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:19 (1990),  56–59
  7. STUDY OF COMPOSITION DISTRIBUTION IN ALGAAS HETEROSTRUCTURES WITH QUANTUM-DIMENSIONAL LAYERS BY THE RAMAN-SCATTERING TECHNIQUE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990),  7–12
  8. Фотоэлектрические свойства AlGaAs$-$GaAs-гетероструктур с туннельно-тонким «широкозонным окном»

    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  597–600
  9. ORIENTATION EFFECTS UNDER LIQUID-PHASE EPITAXY OF ALGAAS STRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 58:9 (1988),  1789–1792
  10. Квантово-размерные низкопороговые AlGaAs-гетеролазеры, полученные методом низкотемпературной жидкофазной эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1775–1779
  11. MULTIDIMENSIONAL STRIP AL-GA-AS-HETEROLASERS OF A MILLIAMPERIC RANGE OF CURRENTS (IN=2.1-MA, T=300-K), OBTAINED BY METHODS OF LOW-TEMPERATURE LIQUID-PHASE EPITAXY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:22 (1988),  2057–2060
  12. LOW-THRESHOLD (IN=6.2-MA, T=300-K) BAND QUANTUM DIMENSIONAL ALGAAS-HETEROLASERS CREATED BY THE LOW-TEMPERATURE LPE METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1537–1540
  13. HETEROSTRUCTURES WITH TUNNEL THIN (20-50-A) SURFACE ALGAAS-LAYERS OBTAINED BY THE LPE METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:15 (1988),  1429–1433
  14. INJECTION ANNEALING OF DEFECTS OF ALGAAS-STRUCTURES OF SOLAR ELEMENTS DURING EXPOSURE TO RADIATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  121–125
  15. VILET PALGAAS-PGAAS-NGAAS-PHOTOELEMENTS WITH SUPERTHIN (30-300 A) WIDE-ZONE LAYERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:1 (1988),  76–79
  16. Photoluminescence of Quantum-Dimensional Layers in AlGaAs-Heterostructures Produced by the Method of Low-Temperature Liquid-Phase Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1212–1216
  17. High-Efficiency Information-Energy AlGaAs-GaAs Photoreceivers for Fiber-Optical Communication Lines

    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  435–439
  18. Low-Threshold (${j_{\text{п}}=230\,\text{А/см}^{2}}$, ${T=300}$ K) AlGaAs Double-Heterostructure Lasers with Separate Limitation Produced by the Method of Liquid Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  381–383
  19. $Al\,Ga\,As$-heterostructures with quantum-dimensional layers, obtained by low-temperature liquid-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1089–1093
  20. TRANSITION LAYER EFFECT ON THE SPECTRAL DISTRIBUTION OF THE ALGAAS HETEROPHOTOELEMENT PHOTO-RESPONSE

    Zhurnal Tekhnicheskoi Fiziki, 55:6 (1985),  1124–1129
  21. Low Rate of Surface Recombination (${S =10^{4}}\,cm/s$) in Epitaxial $n$-Туре GaAs

    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1826–1829
  22. Photoluminescent Properties and Electron Structure of Anodic-Oxidized $n$-InP Surface

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  110–113
  23. EFFECTIVENESS OF PHOTOELECTRIC TRANSFORMATION OF SHORT RADIATION IMPULSES

    Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984),  979–982
  24. Cascade Si$-$AlGaAs Solar Photocells

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  121–125
  25. SOLAR HETEROPHOTOELEMENTS WITH AN INCREASED DEPTH OF P-N TRANSITION POSITION

    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1658–1660
  26. ELECTROLUMINESCENT INVESTIGATIONS OF SOLAR PALGAAS-PGAAS-NGAAS HETEROPHOTOELEMENTS WITH DISTRIBUTED PARAMETERS

    Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983),  329–332
  27. Взаимное влияние широкозонного и узкозонного фотоэлементов при работе каскадных $n$-GaAs${-}p$-AlGaAs${-}n$-AlGaAs-гетерофотопреобразователей

    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  446–448
  28. Закономерности формообразования вольтамперных характеристик солнечных элементов с распределенными параметрами

    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  358–361
  29. Высокоэффективные $p$AlGaAs${-}p$GaAs${-}n$GaAs солнечные фотоэлементы с КПД 19% (AM 0) и 24% (AM 1.5)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:20 (1983),  1251–1254
  30. Фотоэлектролюминесценция в AlGaAs-гетероструктуpax

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983),  1058–1061
  31. Концентраторные фотоэлектрические батареи на основе AlGaAs$-$GaAs солнечных элементов

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:2 (1983),  102–104

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