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Abdusattarov A G

Publications in Math-Net.Ru

  1. Влияние параметров импульсного электронного облучения на эффективность образования дефектов в кремнии

    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2221–2223
  2. Влияние интенсивности импульсного электронного облучения на образование дефектов в $p$-кремнии

    Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  502–504
  3. Interaction of Eigen Point Defects with Impurity Phosphorus Atoms in $n$-Type Silicon under Electron (Pulsed) Irradiation

    Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  2106–2109
  4. Lifetime of Free Vacancies and Eigen Interstitial Atoms in n-Type Germanium under Electron and Gamma Irradiation

    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1826–1831
  5. Rate of $A$-Center Formation in Silicon under Electron Pulsed Irradiation

    Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  164–167
  6. Donor group bounding into electrically nonactive complexes during electron P-germanium with the 1-MeV energy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986),  1461–1464


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