Konakova R V

Publications in Math-Net.Ru

1. Features of the temperature dependence of the specific contact resistance of Au–Ti–Pd–$n^{+}$–$n$-Si diffusion silicon structures
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  485–492
2. On a new mechanism for the realization of ohmic contacts
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  138–142
3. On the ohmicity of Schottky contacts
   
   Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  777–784
4. The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  82–87
5. INTERPHASE INTERACTIONS IN THIN-FILM SURFACE-BARRIER PT-GAAS STRUCTURES
   
   Zhurnal Tekhnicheskoi Fiziki, 62:8 (1992),  88–94
6. ORDERED LATERAL HETEROGENEITY OF TRANSITIONAL LAYERS IN AUGE-GAAS SYSTEM
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:16 (1992),  10–13
7. Пробой кремниевых $p^{+}{-}n{-}n^{+}$-диодов
   
   Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1754–1758
8. Collisional Broadening of Optical Spectra and Its Relation with Mobility
   
   Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1138–1141
9. Effect of $\gamma$-Radiation on Surface Generation-Recombination in GaAs-Based Semiconductor Structures
   
   Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1640–1646
10. Radiation Ordering on the Metal-InP Interface
    
    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  326–329
11. Effect of Radiation on Radiative and Nonradiative Recombination in Heterosystems Based on GaAs and Al$_{x}$Ga$_{1-x}$As
    
    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  322–325
12. STRUCTURE-DOPED ORDERING AFFECTED BY LOW-SCALE PENETRATING RADIATION
    
    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  1977–1982
13. Effect of Population of Impurity Levels in the Spectra of GaAs Surface-Barrier Electroreflection
    
    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  678–681
14. Пространственная локализация эффекта радиационно-стимулированного гетерирования
    
    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1885–1887
15. To the Determination of Recombination Rate at the Interface of Si$_{x}$Ge$_{1-x}{-}$GaAs Heterojunctions
    
    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  402–407
16. ELECTRICAL CHARACTERISTICS OF THERMALLY AND RADIATION RESISTANT CASCADE DIODES BASED ON ALXGA1-XAS
    
    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1575–1577
17. Радиационно-стимулированное гетерирование структурных дефектов в гетеросистемах Si$_{x}$Ge$_{1-x}{-}$GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 17:7 (1983),  1349–1351