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Publications in Math-Net.Ru
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INTERPHASE INTERACTIONS IN THIN-FILM SURFACE-BARRIER PT-GAAS STRUCTURES
Zhurnal Tekhnicheskoi Fiziki, 62:8 (1992), 88–94
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ORDERED LATERAL HETEROGENEITY OF TRANSITIONAL LAYERS IN AUGE-GAAS SYSTEM
Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:16 (1992), 10–13
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Ultrasound-stimulated structural changes in strained heterosystems
Fizika Tverdogo Tela, 33:8 (1991), 2340–2344
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Collisional Broadening of Optical Spectra and Its Relation with Mobility
Fizika i Tekhnika Poluprovodnikov, 21:6 (1987), 1138–1141
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Heavily Doped and Highly Compensated Heteroepitaxial Germanium Films
Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 393–399
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Acoustostimulated relaxation of inner mechanic tensions in heterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:21 (1987), 1310–1313
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Athermal excitation of dislocation-motion by the electron-beam in heteroepitaxial germanium films
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1260–1263
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Effect of Radiation on Radiative and Nonradiative Recombination in Heterosystems Based on GaAs and Al$_{x}$Ga$_{1-x}$As
Fizika i Tekhnika Poluprovodnikov, 20:2 (1986), 322–325
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To the Determination of Recombination Rate at the Interface of Si$_{x}$Ge$_{1-x}{-}$GaAs Heterojunctions
Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 402–407
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ELECTRICAL CHARACTERISTICS OF THERMALLY AND RADIATION RESISTANT CASCADE
DIODES BASED ON ALXGA1-XAS
Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983), 1575–1577
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Радиационно-стимулированное гетерирование структурных дефектов
в гетеросистемах Si$_{x}$Ge$_{1-x}{-}$GaAs
Fizika i Tekhnika Poluprovodnikov, 17:7 (1983), 1349–1351
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