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Koval'chuk Yu V

Publications in Math-Net.Ru

  1. Phase transformations of amorphous binary semiconductor under pulsed laser irradiation

    Fizika Tverdogo Tela, 33:1 (1991),  99–103
  2. CONDITIONS OF GAAS(100) GALLIUM-STABILIZED SURFACE DURING MOLECULAR-BEAM EPITAXY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:24 (1991),  94–98
  3. STUDY OF CRYSTAL QUALITY OF ALXGA1-XAS SOLID-SOLUTIONS IN RELATION TO SURFACE RECONSTRUCTION IN THE COURSE OF EPITAXIAL-GROWTH FROM MOLECULAR-BEAMS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991),  42–44
  4. STUDY OF SEMICONDUCTING ALGAAS-GAAS HETEROLASER OBTAINED BY THE MOLECULAR-BEAM EPITAXY TECHNIQUE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  6–10
  5. POTENTIAL MECHANISM OF COLD NUCLEAR SYNTHESIS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:5 (1990),  91–94
  6. DYNAMICS OF FUSION AND CRYSTALLIZATION OF THIN AMORPHOUS IMPLANTED SILICON LAYERS UNDER NANOSECOND LASER-PULSES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  13–17
  7. LASER PURIFICATION OF SUBLAYERS FOR MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE - DIFFRACTION STUDY OF FAST ELECTRONS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989),  67–69
  8. Melting of Semiconductors by Pulsed Laser Radiation (Review)

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  1945–1969
  9. Reduction of luminescent properties of implanted indium-phosphide induced by pulse laser-emission

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986),  1217–1222
  10. Dynamics of melting of crystal indium-phosphide under nanosecond laser pulsations

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1119–1122
  11. Anomalous behavior of optical characteristics of indium-phosphide fusion, obtained by the nanosecond laser-pulse

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1115–1119
  12. INVESTIGATION OF GAAS FUSION PECULIARITIES UNDER 2-LONG-WAVE LASER ANNEALING

    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2144–2148
  13. INJECTION INGAASP/INP HETEROLASER WITH DISTRIBUTED FEEDBACK OBTAINED BY INTERFERENCE LASER ANNEALING

    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2034–2036
  14. The effect of nanosecond laser-pulses on the melting of graphite and diamonds

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  921–924
  15. The effect of nanosecond laser-pulses on indium-phosphide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  916–920
  16. Dynamics of reflection coefficients of crystal $Si$ and $Ga\,As$ induced by picosecond laser-pulses

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985),  761–765
  17. Ultrashort laser-pulse effect on electrophysical properties of silicon-carbide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985),  669–671
  18. Photoluminescence of ion-implanted $Ga\,As$ after the nanosecond laser effect

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985),  368–371
  19. DUAL WAVELENGTH LASER ANNEALING OF SEMICONDUCTORS

    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1408–1410
  20. NONLINEAR INTERFEROMETRY

    Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984),  896–904
  21. STANDING X-RAY WAVE TECHNIQUE IN THE INVESTIGATION OF THE GALLIUM-ARSENIDE LASER AMORPHISM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:22 (1984),  1402–1405
  22. К вопросу о механизмах лазерного отжига полупроводников

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2224–2228
  23. Интерференционный лазерный отжиг полупроводников

    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  235–241
  24. Новый фазовый переход в SiC и GaAs под действием пикосекундных лазерных импульсов

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:22 (1983),  1373–1376
  25. О возможностях метода фотолюминесценции в исследовании лазерной аморфизации арсенида галлия

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983),  1298–1301
  26. Полупроводниковый лазер (${\lambda=1.55}$ мкм) с распределенной обратной связью в первом порядке, полученной импульсным лазерным отжигом

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983),  1294–1297
  27. Аморфизация монокристаллического арсенида галлия под действием пикосекундных световых импульсов

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983),  897–900
  28. Эпитаксиальная кристаллизация напыленных слоев кремния на подложках GaP в условиях интерференционного лазерного отжига

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:14 (1983),  850–853

© Steklov Math. Inst. of RAS, 2024