Myachin V E

Publications in Math-Net.Ru

1. Phase transformations of amorphous binary semiconductor under pulsed laser irradiation
   
   Fizika Tverdogo Tela, 33:1 (1991),  99–103
2. CONDITIONS OF GAAS(100) GALLIUM-STABILIZED SURFACE DURING MOLECULAR-BEAM EPITAXY
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:24 (1991),  94–98
3. STUDY OF CRYSTAL QUALITY OF ALXGA1-XAS SOLID-SOLUTIONS IN RELATION TO SURFACE RECONSTRUCTION IN THE COURSE OF EPITAXIAL-GROWTH FROM MOLECULAR-BEAMS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991),  42–44
4. LINES OF POWER SEMICONDUCTING LASERS MADE BY THE MOLECULAR-BEAM EPITAXY METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991),  31–34
5. STUDY OF SEMICONDUCTING ALGAAS-GAAS HETEROLASER OBTAINED BY THE MOLECULAR-BEAM EPITAXY TECHNIQUE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  6–10
6. POTENTIAL MECHANISM OF COLD NUCLEAR SYNTHESIS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:5 (1990),  91–94
7. DYNAMICS OF FUSION AND CRYSTALLIZATION OF THIN AMORPHOUS IMPLANTED SILICON LAYERS UNDER NANOSECOND LASER-PULSES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  13–17
8. LASER PURIFICATION OF SUBLAYERS FOR MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE - DIFFRACTION STUDY OF FAST ELECTRONS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989),  67–69
9. Reduction of luminescent properties of implanted indium-phosphide induced by pulse laser-emission
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986),  1217–1222
10. Dynamics of melting of crystal indium-phosphide under nanosecond laser pulsations
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1119–1122
11. Anomalous behavior of optical characteristics of indium-phosphide fusion, obtained by the nanosecond laser-pulse
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1115–1119
12. INVESTIGATION OF GAAS FUSION PECULIARITIES UNDER 2-LONG-WAVE LASER ANNEALING
    
    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2144–2148
13. INJECTION INGAASP/INP HETEROLASER WITH DISTRIBUTED FEEDBACK OBTAINED BY INTERFERENCE LASER ANNEALING
    
    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2034–2036
14. The effect of nanosecond laser-pulses on the melting of graphite and diamonds
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  921–924
15. The effect of nanosecond laser-pulses on indium-phosphide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  916–920
16. Photoluminescence of ion-implanted $Ga\,As$ after the nanosecond laser effect
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985),  368–371
17. DUAL WAVELENGTH LASER ANNEALING OF SEMICONDUCTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1408–1410